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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APTM100A18FTG APTM100A18FTG Microsemi Power Products Group MOSFET 2N-CH 1000V 43A SP4
APTM100H35FTG APTM100H35FTG Microsemi Power Products Group MOSFET 4N-CH 1000V 22A SP4
APTM10UM02FAG APTM10UM02FAG Microsemi Power Products Group MOSFET N-CH 100V 570A SP6
APTM120A29FTG APTM120A29FTG Microsemi Power Products Group MOSFET 2N-CH 1200V 34A SP4
APTM50DAM17G APTM50DAM17G Microsemi Power Products Group MOSFET N-CH 500V 180A SP6
APTM50SKM17G APTM50SKM17G Microsemi Power Products Group MOSFET N-CH 500V 180A SP6
APTM20DAM04G APTM20DAM04G Microsemi Power Products Group MOSFET N-CH 200V 372A SP6
APTM100DAM90G APTM100DAM90G Microsemi Power Products Group MOSFET N-CH 1000V 78A SP6
APTM100SKM90G APTM100SKM90G Microsemi Power Products Group MOSFET N-CH 1000V 78A SP6
APTM20DHM08G APTM20DHM08G Microsemi Power Products Group MOSFET 2N-CH 200V 208A SP6
APTM50DHM35G APTM50DHM35G Microsemi Power Products Group MOSFET 2N-CH 500V 99A SP6
APTC60TAM35PG APTC60TAM35PG Microsemi Power Products Group MOSFET 6N-CH 600V 72A SP6-P
APTM10TDUM09PG APTM10TDUM09PG Microsemi Power Products Group MOSFET 6N-CH 100V 139A SP6-P
APTM50HM75SCTG APTM50HM75SCTG Microsemi Power Products Group MOSFET 4N-CH 500V 46A SP4
APTC90HM60T3G APTC90HM60T3G Microsemi Power Products Group MOSFET 4N-CH 900V 59A SP3
APTM50AM38SCTG APTM50AM38SCTG Microsemi Power Products Group MOSFET 2N-CH 500V 90A SP4
APTM20AM06SG APTM20AM06SG Microsemi Power Products Group MOSFET 2N-CH 200V 300A SP6
APTM20UM04SAG APTM20UM04SAG Microsemi Power Products Group MOSFET N-CH 200V 417A SP6
APTM10TAM09FPG APTM10TAM09FPG Microsemi Power Products Group MOSFET 6N-CH 100V 139A SP6-P
APTC80AM75SCG APTC80AM75SCG Microsemi Power Products Group MOSFET 2N-CH 800V 56A SP6
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