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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IXFN27N80 IXFN27N80 IXYS MOSFET N-CH 800V 27A SOT-227B
IXFN80N50 IXFN80N50 IXYS MOSFET N-CH 500V 80A SOT-227B
IXFN36N100 IXFN36N100 IXYS MOSFET N-CH 1KV 36A SOT-227B
IXFN48N60P IXFN48N60P IXYS MOSFET N-CH 600V 40A SOT-227
IXFN140N30P IXFN140N30P IXYS MOSFET N-CH 300V 110A SOT-227B
IXFN120N20 IXFN120N20 IXYS MOSFET N-CH 200V 120A SOT-227B
IXTN550N055T2 IXTN550N055T2 IXYS MOSFET N-CH 55V 550A SOT-227
IXFN26N90 IXFN26N90 IXYS MOSFET N-CH 900V 26A SOT-227B
IXFN38N100P IXFN38N100P IXYS MOSFET N-CH 1000V 38A SOT-227B
IXFN70N60Q2 IXFN70N60Q2 IXYS MOSFET N-CH 600V 70A SOT-227B
IXTN22N100L IXTN22N100L IXYS MOSFET N-CH 1000V 22A SOT-227
IXFN50N80Q2 IXFN50N80Q2 IXYS MOSFET N-CH 800V 50A SOT-227B
IXFN60N60 IXFN60N60 IXYS MOSFET N-CH 600V 60A SOT-227B
IXTN30N100L IXTN30N100L IXYS MOSFET N-CH 1000V 30A SOT-227
IXFN64N50P IXFN64N50P IXYS MOSFET N-CH 500V 61A SOT-227
IXFN140N20P IXFN140N20P IXYS MOSFET N-CH 200V 115A SOT227B
IXFN106N20 IXFN106N20 IXYS MOSFET N-CH 200V 106A SOT-227B
IXFN55N50 IXFN55N50 IXYS MOSFET N-CH 500V 55A SOT-227B
IXFN210N20P IXFN210N20P IXYS MOSFET N-CH 200V 188A SOT-227B
IXTN46N50L IXTN46N50L IXYS MOSFET N-CH 500V 46A SOT-227B
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