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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IXFE80N50 IXFE80N50 IXYS MOSFET N-CH 500V 72A SOT-227B
VMM45-02F VMM45-02F IXYS MOSFET 2N-CH 200V 45A TO-240AA
IXFN30N110P IXFN30N110P IXYS MOSFET N-CH 1100V 25A SOT-227B
IXFN26N100P IXFN26N100P IXYS MOSFET N-CH 1000V 23A SOT-227B
IXTN17N120L IXTN17N120L IXYS MOSFET N-CH 1200V 15A SOT-227B
IXFN26N120P IXFN26N120P IXYS MOSFET N-CH 1200V 23A SOT-227B
IXFN44N80Q3 IXFN44N80Q3 IXYS MOSFET N-CH 800V 37A SOT-227
IXFN32N100Q3 IXFN32N100Q3 IXYS MOSFET N-CH 1000V 28A SOT-227
IXFN80N48 IXFN80N48 IXYS MOSFET N-CH 480V 80A SOT-227B
IXFN130N30 IXFN130N30 IXYS MOSFET N-CH 300V 130A SOT-227B
IXFN34N100 IXFN34N100 IXYS MOSFET N-CH 1000V 34A SOT-227B
IXFN30N120P IXFN30N120P IXYS MOSFET N-CH 1200V 30A SOT-227B
IXFN40N110P IXFN40N110P IXYS MOSFET N-CH 1100V 34A SOT-227B
VHM40-06P1 VHM40-06P1 IXYS MOSFET 2N-CH 600V 38A ECO-PAC2
IXFE36N100 IXFE36N100 IXYS MOSFET N-CH 1000V 33A ISOPLUS227
IXFN36N110P IXFN36N110P IXYS MOSFET N-CH 1100V 36A SOT-227B
IXFE39N90 IXFE39N90 IXYS MOSFET N-CH 900V 34A ISOPLUS227
IXTN5N250 IXTN5N250 IXYS MOSFET N-CH 2500V 5A SOT227B
IXFN39N90 IXFN39N90 IXYS MOSFET N-CH 900V 39A SOT-227B
IXTN62N50L IXTN62N50L IXYS MOSFET N-CH 500V 62A SOT-227
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