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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ALD110900SAL ALD110900SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD114913SAL ALD114913SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD110904SAL ALD110904SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD110900PAL ALD110900PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD110902PAL ALD110902PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD110902SAL ALD110902SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD1105SBL ALD1105SBL Advanced Linear Devices Inc MOSFET 2N/2P-CH 10.6V 14SOIC
ALD212900PAL ALD212900PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8DIP
ALD110814SCL ALD110814SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16SOIC
ALD110814PCL ALD110814PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16DIP
ALD110804SCL ALD110804SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16SOIC
ALD212900APAL ALD212900APAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8DIP
ALD110900ASAL ALD110900ASAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD1102PAL ALD1102PAL Advanced Linear Devices Inc MOSFET 2P-CH 10.6V 8DIP
ALD1102SAL ALD1102SAL Advanced Linear Devices Inc MOSFET 2P-CH 10.6V 8SOIC
ALD1101SAL ALD1101SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD210800APCL ALD210800APCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16DIP
ALD1103SBL ALD1103SBL Advanced Linear Devices Inc MOSFET 2N/2P-CH 10.6V 14SOIC
ALD1102ASAL ALD1102ASAL Advanced Linear Devices Inc MOSFET 2P-CH 10.6V 8SOIC
ALD110908PAL ALD110908PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
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