中电网首页

产品索引  > 分立半导体产品 > 单二极管/整流器

厂商 包装系列二极管类型电压-DC反向(Vr)(最大值)电流-平均整流(Io)不同If时的电压-正向(Vf)速度反向恢复时间(trr)不同Vr时的电流-反向漏电流不同Vr,F时的电容安装类型封装/外壳供应商器件封装工作温度-结
1234567891011 12
PDF 缩略图 器件名称 制造商 描述
GB20SLT12-247 GB20SLT12-247 GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 20A TO247AC
S85JR S85JR GeneSiC Semiconductor DIODE GEN PURP REV 600V 85A DO5
GAP3SLT33-220FP GAP3SLT33-220FP GeneSiC Semiconductor DIODE SCHOTTKY 3.3KV 300MA TO220
S300Y S300Y GeneSiC Semiconductor DIODE GEN PURP 1.6KV 300A DO9
S300YR S300YR GeneSiC Semiconductor DIODE GEN PURP REV 1.6KV DO9
GB02SHT01-46 GB02SHT01-46 GeneSiC Semiconductor DIODE SCHOTTKY 100V 4A
GB50SLT12-247 GB50SLT12-247 GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 50A TO247AC
GB01SLT12-220 GB01SLT12-220 GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 1A TO220AC
GB01SLT12-252 GB01SLT12-252 GeneSiC Semiconductor DIODE SILICON 1.2KV 1A TO252
GB02SLT12-252 GB02SLT12-252 GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 2A TO252
GB02SLT12-252 GB02SLT12-252 GeneSiC Semiconductor DIODE SILICON 1.2KV 2A TO252
GB02SLT12-252 GB02SLT12-252 GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 2A TO252
1N1200A 1N1200A GeneSiC Semiconductor DIODE GEN PURP 100V 12A DO4
1N3214 1N3214 GeneSiC Semiconductor DIODE GEN PURP 600V 15A DO5
1N3889 1N3889 GeneSiC Semiconductor DIODE GEN PURP 50V 12A DO4
1N1190A 1N1190A GeneSiC Semiconductor DIODE GEN PURP 600V 40A DO5
1N1190AR 1N1190AR GeneSiC Semiconductor DIODE GEN PURP REV 600V 40A DO5
1N1186AR 1N1186AR GeneSiC Semiconductor DIODE GEN PURP REV 200V 40A DO5
1N1184 1N1184 GeneSiC Semiconductor DIODE GEN PURP 100V 35A DO5
1N3879R 1N3879R GeneSiC Semiconductor DIODE GEN PURP REV 50V 6A DO4
1234567891011 12