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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
GP1M008A050CG GP1M008A050CG Global Power Technologies Group MOSFET N-CH 500V 8A DPAK
GP1M008A050CG GP1M008A050CG Global Power Technologies Group MOSFET N-CH 500V 8A DPAK
GP1M008A050CG GP1M008A050CG Global Power Technologies Group MOSFET N-CH 500V 8A DPAK
GP1M003A080CH GP1M003A080CH Global Power Technologies Group MOSFET N-CH 800V 3A DPAK
GP1M003A080CH GP1M003A080CH Global Power Technologies Group MOSFET N-CH 800V 3A DPAK
GP1M003A080CH GP1M003A080CH Global Power Technologies Group MOSFET N-CH 800V 3A DPAK
GP2M002A060FG GP2M002A060FG Global Power Technologies Group MOSFET N-CH 600V 2A TO220F
GP2M004A065FG GP2M004A065FG Global Power Technologies Group MOSFET N-CH 650V 4A TO220F
GP1M009A020FG GP1M009A020FG Global Power Technologies Group MOSFET N-CH 200V 9A TO220F
GP1M006A070FH GP1M006A070FH Global Power Technologies Group MOSFET N-CH 700V 5A TO220F
GP2M004A060PG GP2M004A060PG Global Power Technologies Group MOSFET N-CH 600V 4A IPAK
GP1M008A025PG GP1M008A025PG Global Power Technologies Group MOSFET N-CH 250V 8A IPAK
GP1M003A080FH GP1M003A080FH Global Power Technologies Group MOSFET N-CH 800V 3A TO220F
GP2M004A065PG GP2M004A065PG Global Power Technologies Group MOSFET N-CH 650V 4A IPAK
GP1M008A050FG GP1M008A050FG Global Power Technologies Group MOSFET N-CH 500V 8A TO220F
GP1M008A050HG GP1M008A050HG Global Power Technologies Group MOSFET N-CH 500V 8A TO220
GP2M007A080F GP2M007A080F Global Power Technologies Group MOSFET N-CH 800V 7A TO220F
GP1M008A080H GP1M008A080H Global Power Technologies Group MOSFET N-CH 800V 8A TO220
GP2M010A060F GP2M010A060F Global Power Technologies Group MOSFET N-CH 600V 10A TO220F
GP1M007A090FH GP1M007A090FH Global Power Technologies Group MOSFET N-CH 900V 7A TO220F
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