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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
2SK669-AC 2SK669-AC SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 50V 100MA 3SPA
2SK3709 2SK3709 SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 100V 37A TO-220ML
2SK4084LS 2SK4084LS SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 500V 14A TO-220FI
2SK4096LS 2SK4096LS SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 500V 8A TO-220FI
2SK4097LS 2SK4097LS SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 500V 9.5A TO-220FI
2SK2624ALS 2SK2624ALS SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 600V 3.5A TO-220FI
2SK2625ALS 2SK2625ALS SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 600V 5A TO-220FI
2SK4094 2SK4094 SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 60V 100A TO220-3
2SK3702 2SK3702 SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 60V 18A TO-220ML
2SK4073LS 2SK4073LS SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 60V 90A TO-220FI
2SK2632LS 2SK2632LS SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 800V 2.5A TO-220FI
2SJ655 2SJ655 SANYO Semiconductor (U.S.A) Corporation MOSFET P-CH 100V 12A TO-220ML
2SJ650 2SJ650 SANYO Semiconductor (U.S.A) Corporation MOSFET P-CH 60V 12A TO-220ML
2SJ651 2SJ651 SANYO Semiconductor (U.S.A) Corporation MOSFET P-CH 60V 20A TO-220ML
2SJ683-TL-E 2SJ683-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET P-CH 60V 65A ZP
2SJ683-TL-E 2SJ683-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET P-CH 60V 65A ZP
2SJ683-TL-E 2SJ683-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET P-CH 60V 65A ZP
2SK4181-TL-E 2SK4181-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 525V 7.5A ZP
2SK4181-TL-E 2SK4181-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 525V 7.5A ZP
2SK4181-TL-E 2SK4181-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N-CH 525V 7.5A ZP
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