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厂商 系列IGBT类型配置电压-集射极击穿(最大值)电流-集电极(Ic)(最大值)功率-最大值不同Vge,Ic时的Vce(on)电流-集电极截止(最大值)不同Vce时的输入电容(Cies)输入NTC热敏电阻安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
VS-GB90DA60U VS-GB90DA60U Vishay Semiconductor Diodes Division TRANSISTOR INSLTED GATE BIPOLAR
VS-GA250SA60S VS-GA250SA60S Vishay Semiconductor Diodes Division IGBT 600V 400A SOT227
VS-50MT060WHTAPBF VS-50MT060WHTAPBF Vishay Semiconductor Diodes Division IGBT 600V 114A 658W MTP
VS-GB90SA120U VS-GB90SA120U Vishay Semiconductor Diodes Division TRANSISTOR INSLTED GATE BIPOLAR
VS-ETL015Y120H VS-ETL015Y120H Vishay Semiconductor Diodes Division IGBT 1200V 22A 89W EMIPAK-2B
VS-ETF150Y65U VS-ETF150Y65U Vishay Semiconductor Diodes Division IGBT 650V 150A EMIPAK-2B
VS-ETF075Y60U VS-ETF075Y60U Vishay Semiconductor Diodes Division IGBT 600V 109A 294W EMIPAK-2B
VS-ENQ030L120S VS-ENQ030L120S Vishay Semiconductor Diodes Division IGBT 1200V 61A 216W EMIPAK-1B
VS-GB75LA60UF VS-GB75LA60UF Vishay Semiconductor Diodes Division IGBT 600V 70A LS CHOPPER SOT-227
VS-GB75NA60UF VS-GB75NA60UF Vishay Semiconductor Diodes Division IGBT 600V 70A HS CHOPPER SOT-227
VS-GA200SA60UP VS-GA200SA60UP Vishay Semiconductor Diodes Division IGBT 600V 200A 500W SOT-227
VS-GB55LA120UX VS-GB55LA120UX Vishay Semiconductor Diodes Division IGBT 1200V 55A LS CHOPPER SOT227
VS-GB55NA120UX VS-GB55NA120UX Vishay Semiconductor Diodes Division IGBT 1200V 55A HS CHOPPER SOT227
CPV363M4U CPV363M4U Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 6.8A IMS-2
VS-CPV362M4KPBF VS-CPV362M4KPBF Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP
VS-CPV362M4UPBF VS-CPV362M4UPBF Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP
VS-GB05XP120KTPBF VS-GB05XP120KTPBF Vishay Semiconductor Diodes Division MODULE MTP SWITCH
CPV362M4F CPV362M4F Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 8.8A IMS-2
CPV362M4K CPV362M4K Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 31 IMS-2
CPV362M4U CPV362M4U Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 3.9A IMS-2
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