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厂商 包装系列格式-存储器存储器类型存储容量速度接口电压-电源工作温度封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
MT29F16G16ADBCAH4-IT:C TR MT29F16G16ADBCAH4-IT:C TR Micron Technology Inc IC FLASH 16GBIT VFBGA
MT29F16G08ADACAH4-IT:C MT29F16G08ADACAH4-IT:C Micron Technology Inc IC FLASH 16GBIT VFBGA
MT29F16G08ADBCAH4-IT:C MT29F16G08ADBCAH4-IT:C Micron Technology Inc IC FLASH 16GBIT VFBGA
MT29F16G16ADACAH4-IT:C MT29F16G16ADACAH4-IT:C Micron Technology Inc IC FLASH 16GBIT VFBGA
MT29F16G16ADBCAH4-IT:C MT29F16G16ADBCAH4-IT:C Micron Technology Inc IC FLASH 16GBIT VFBGA
MT49H16M18CSJ-25:B TR MT49H16M18CSJ-25:B TR Micron Technology Inc IC RLDRAM 288MBIT 2.5NS UBGA
MT49H16M18CSJ-25:B MT49H16M18CSJ-25:B Micron Technology Inc IC RLDRAM 288MBIT 2.5NS UBGA
MT29F128G08CKCCBH2-12Z:C MT29F128G08CKCCBH2-12Z:C Micron Technology Inc MOD FLASH NAND 128KB 100TBGA
MT49H16M18SJ-25 IT:B TR MT49H16M18SJ-25 IT:B TR Micron Technology Inc IC RLDRAM 288MBIT 2.5NS UBGA
MT49H8M36SJ-25 IT:B TR MT49H8M36SJ-25 IT:B TR Micron Technology Inc IC RLDRAM 288MBIT 2.5NS UBGA
MT49H8M36BM-33 IT:B TR MT49H8M36BM-33 IT:B TR Micron Technology Inc IC RLDRAM 288MBIT 3.3NS UBGA
MT49H16M18SJ-25 IT:B MT49H16M18SJ-25 IT:B Micron Technology Inc IC RLDRAM 288MBIT 2.5NS UBGA
MT49H8M36SJ-25 IT:B MT49H8M36SJ-25 IT:B Micron Technology Inc IC RLDRAM 288MBIT 2.5NS UBGA
MT49H8M36BM-33 IT:B MT49H8M36BM-33 IT:B Micron Technology Inc IC RLDRAM 288MBIT 3.3NS UBGA
MT49H8M36BM-18:B MT49H8M36BM-18:B Micron Technology Inc IC RLDRAM 288MBIT 1.875NS UBGA
MT42L256M64D4LM-18 WT:A TR MT42L256M64D4LM-18 WT:A TR Micron Technology Inc IC LPDDR2 SDRAM 16GBIT VFBGA
MT42L256M64D4LM-18 WT:A MT42L256M64D4LM-18 WT:A Micron Technology Inc IC LPDDR2 SDRAM 16GBIT VFBGA
MTFC16GJGEF-AIT Z TR MTFC16GJGEF-AIT Z TR Micron Technology Inc IC FLASH 16GBIT 169TFBGA
MTFC16GJGEF-AIT Z MTFC16GJGEF-AIT Z Micron Technology Inc IC FLASH 16GBIT 169TFBGA
MTFC16GJDDQ-4M IT MTFC16GJDDQ-4M IT Micron Technology Inc IC FLASH 128GBIT 100LBGA
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