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厂商 包装系列格式-存储器存储器类型存储容量速度接口电压-电源工作温度封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
MT44K16M36RB-125F:A MT44K16M36RB-125F:A Micron Technology Inc IC RLDRAM 576MBIT 1.25NS FBGA
MT44K32M18RB-107E:A MT44K32M18RB-107E:A Micron Technology Inc IC RLDRAM 576MBIT 1.07NS FBGA
MT44K32M18RB-125E IT:A MT44K32M18RB-125E IT:A Micron Technology Inc IC RLDRAM 576MBIT 1.25NS FBGA
MT44K32M18RB-125F:A MT44K32M18RB-125F:A Micron Technology Inc IC RLDRAM 576MBIT 1.25NS FBGA
MT49H16M36SJ-25 IT:B TR MT49H16M36SJ-25 IT:B TR Micron Technology Inc IC RLDRAM 576MBIT 2.5NS UBGA
MT49H16M36SJ-25 IT:B MT49H16M36SJ-25 IT:B Micron Technology Inc IC RLDRAM 576MBIT 2.5NS UBGA
MT49H32M18SJ-25E:B TR MT49H32M18SJ-25E:B TR Micron Technology Inc IC RLDRAM 576MBIT 2.5NS UBGA
MT49H32M18SJ-25E:B MT49H32M18SJ-25E:B Micron Technology Inc IC RLDRAM 576MBIT 2.5NS UBGA
MT49H16M36SJ-18:B MT49H16M36SJ-18:B Micron Technology Inc IC RLDRAM 576MBIT 1.875N 144UBGA
MT49H16M36FM-18:B MT49H16M36FM-18:B Micron Technology Inc IC RLDRAM 576MBIT 1.875N 144UBGA
MT49H16M36SJ-18:B TR MT49H16M36SJ-18:B TR Micron Technology Inc IC RLDRAM 576MBIT 1.875N 144UBGA
MT49H32M18SJ-18:B TR MT49H32M18SJ-18:B TR Micron Technology Inc IC RLDRAM 576MBIT 1.875NS UBGA
MT49H32M18SJ-18:B MT49H32M18SJ-18:B Micron Technology Inc IC RLDRAM 576MBIT 1.875NS UBGA
MTFC32GJGEF-AIT Z TR MTFC32GJGEF-AIT Z TR Micron Technology Inc IC FLASH 32GBIT 169TFBGA
MT29F64G08AECDBJ4-6:D MT29F64G08AECDBJ4-6:D Micron Technology Inc MOD FLASH NAND 64GB 132VBGA
MT29F64G08AECDBJ4-6:D TR MT29F64G08AECDBJ4-6:D TR Micron Technology Inc MOD FLASH NAND 64GB 132VBGA
MT47H1G4WTR-25E:C TR MT47H1G4WTR-25E:C TR Micron Technology Inc IC DDR2 SDRAM 4GBIT 2.5NS FBGA
MT47H1G4WTR-25E:C MT47H1G4WTR-25E:C Micron Technology Inc IC DDR2 SDRAM 4GBIT 2.5NS FBGA
MT44K32M18RB-093:A MT44K32M18RB-093:A Micron Technology Inc IC RLDRAM3 576MBIT 168BGA
MT44K32M18RB-093:A TR MT44K32M18RB-093:A TR Micron Technology Inc IC RLDRAM3 576MBIT FBGA
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