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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDB070AN06A0 FDB070AN06A0 Fairchild Semiconductor MOSFET N-CH 60V 80A TO-263AB
NDB6060L NDB6060L Fairchild Semiconductor MOSFET N-CH 60V 48A TO-263AB
NDB6060L NDB6060L Fairchild Semiconductor MOSFET N-CH 60V 48A TO-263AB
NDB6060L NDB6060L Fairchild Semiconductor MOSFET N-CH 60V 48A TO-263AB
FDB5800 FDB5800 Fairchild Semiconductor MOSFET N-CH 60V 80A D2PAK
FDB5800 FDB5800 Fairchild Semiconductor MOSFET N-CH 60V 80A D2PAK
FDB5800 FDB5800 Fairchild Semiconductor MOSFET N-CH 60V 80A D2PAK
FQP30N06L FQP30N06L Fairchild Semiconductor MOSFET N-CH 60V 32A TO-220
FCD9N60NTM FCD9N60NTM Fairchild Semiconductor MOSFET N-CH 600V 9A DPAK
FCD9N60NTM FCD9N60NTM Fairchild Semiconductor MOSFET N-CH 600V 9A DPAK
FCD9N60NTM FCD9N60NTM Fairchild Semiconductor MOSFET N-CH 600V 9A DPAK
IRL640A IRL640A Fairchild Semiconductor MOSFET N-CH 200V 18A TO-220
FDD86102 FDD86102 Fairchild Semiconductor MOSFET N-CH 100V 8A DPAK
FDD86102 FDD86102 Fairchild Semiconductor MOSFET N-CH 100V 8A DPAK
FDD86102 FDD86102 Fairchild Semiconductor MOSFET N-CH 100V 8A DPAK
FDB3632 FDB3632 Fairchild Semiconductor MOSFET N-CH 100V 80A D2PAK
FDB3632 FDB3632 Fairchild Semiconductor MOSFET N-CH 100V 80A D2PAK
FDB3632 FDB3632 Fairchild Semiconductor MOSFET N-CH 100V 80A D2PAK
FDD2572 FDD2572 Fairchild Semiconductor MOSFET N-CH 150V 29A D-PAK
FDD2572 FDD2572 Fairchild Semiconductor MOSFET N-CH 150V 29A D-PAK
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