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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
GA05JT01-46 GA05JT01-46 GeneSiC Semiconductor TRANS SJT 100V 9A
GA05JT03-46 GA05JT03-46 GeneSiC Semiconductor TRANS SJT 300V 9A
2N7638-GA 2N7638-GA GeneSiC Semiconductor TRANS SJT 650V 8A TO276
2N7637-GA 2N7637-GA GeneSiC Semiconductor TRANS SJT 650V 7A TO-257
GA50JT12-247 GA50JT12-247 GeneSiC Semiconductor TRANS SJT 1.2KV 50A
GA05JT12-247 GA05JT12-247 GeneSiC Semiconductor TRANS SJT 1200V 5A
GA20JT12-247 GA20JT12-247 GeneSiC Semiconductor TRANS SJT 1.2KV 20A
GA05JT12-263 GA05JT12-263 GeneSiC Semiconductor TRANS SJT 1200V 5A
GA10JT12-263 GA10JT12-263 GeneSiC Semiconductor TRANS SJT 1.2KV 10A
GA20JT12-263 GA20JT12-263 GeneSiC Semiconductor TRANS SJT 1.2KV 20A
2N7635-GA 2N7635-GA GeneSiC Semiconductor TRANS SJT 650V 4A TO-257
GA50JT06-258 GA50JT06-258 GeneSiC Semiconductor TRANS SJT 600V 100A
2N7636-GA 2N7636-GA GeneSiC Semiconductor TRANS SJT 650V 4A TO276
2N7640-GA 2N7640-GA GeneSiC Semiconductor TRANS SJT 650V 16A TO276
2N7639-GA 2N7639-GA GeneSiC Semiconductor TRANS SJT 650V 15A TO-257
GP1M008A050CG GP1M008A050CG Global Power Technologies Group MOSFET N-CH 500V 8A DPAK
GP1M008A050CG GP1M008A050CG Global Power Technologies Group MOSFET N-CH 500V 8A DPAK
GP1M008A050CG GP1M008A050CG Global Power Technologies Group MOSFET N-CH 500V 8A DPAK
GP1M003A080CH GP1M003A080CH Global Power Technologies Group MOSFET N-CH 800V 3A DPAK
GP1M003A080CH GP1M003A080CH Global Power Technologies Group MOSFET N-CH 800V 3A DPAK
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