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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
GP1M006A065F GP1M006A065F Global Power Technologies Group MOSFET N-CH 650V 5.5A TO220F
GP2M007A065HG GP2M007A065HG Global Power Technologies Group MOSFET N-CH 650V 6.5A TO220
GP1M006A065PH GP1M006A065PH Global Power Technologies Group MOSFET N-CH 650V 5.5A IPAK
GP2M008A060HG GP2M008A060HG Global Power Technologies Group MOSFET N-CH 600V 7.5A TO220
GP1M009A060FH GP1M009A060FH Global Power Technologies Group MOSFET N-CH 600V 9A TO220F
GP2M008A060PG GP2M008A060PG Global Power Technologies Group MOSFET N-CH 600V 7.5A IPAK
GP1M009A050HS GP1M009A050HS Global Power Technologies Group MOSFET N-CH 500V 8.5A TO220
GP1M009A050FSH GP1M009A050FSH Global Power Technologies Group MOSFET N-CH 500V 8.5A TO220F
GP2M010A060H GP2M010A060H Global Power Technologies Group MOSFET N-CH 600V 10A TO220
GP1M010A060FH GP1M010A060FH Global Power Technologies Group MOSFET N-CH 600V 10A TO220F
GP2M012A060H GP2M012A060H Global Power Technologies Group MOSFET N-CH 600V 12A TO220
GP2M008A060FG GP2M008A060FG Global Power Technologies Group MOSFET N-CH 600V 7.5A TO220F
GP1M008A080FH GP1M008A080FH Global Power Technologies Group MOSFET N-CH 800V 8A TO220F
GP2M009A090NG GP2M009A090NG Global Power Technologies Group MOSFET N-CH 900V 9A TO3PN
GP1M010A080N GP1M010A080N Global Power Technologies Group MOSFET N-CH 900V 10A TO3PN
GP2M020A050N GP2M020A050N Global Power Technologies Group MOSFET N-CH 500V 20A TO3PN
GP1M009A090H GP1M009A090H Global Power Technologies Group MOSFET N-CH 900V 9A TO220
GP1M011A050HS GP1M011A050HS Global Power Technologies Group MOSFET N-CH 500V 10A TO220
GP1M011A050FSH GP1M011A050FSH Global Power Technologies Group MOSFET N-CH 500V 10A TO220F
GP1M013A050FH GP1M013A050FH Global Power Technologies Group MOSFET N-CH 500V 13A TO220F
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