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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
GP1M015A050H GP1M015A050H Global Power Technologies Group MOSFET N-CH 500V 14A TO220
GP2M023A050N GP2M023A050N Global Power Technologies Group MOSFET N-CH 500V 23A TO3PN
GP2M009A090FG GP2M009A090FG Global Power Technologies Group MOSFET N-CH 900V 9A TO220F
GP1M009A070F GP1M009A070F Global Power Technologies Group MOSFET N-CH 700V 9A TO220F
GP1M012A060FH GP1M012A060FH Global Power Technologies Group MOSFET N-CH 600V 12A TO220F
GP2M020A050F GP2M020A050F Global Power Technologies Group MOSFET N-CH 500V 18A TO220F
GP1M020A060M GP1M020A060M Global Power Technologies Group MOSFET N-CH 600V 20A TO3P
GP1M020A060N GP1M020A060N Global Power Technologies Group MOSFET N-CH 600V 20A TO3PN
GP1M016A060FH GP1M016A060FH Global Power Technologies Group MOSFET N-CH 600V 16A TO220F
HTNFET-T HTNFET-T Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 4-PIN
HTNFET-D HTNFET-D Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 8-DIP
HTNFET-DC HTNFET-DC Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 8-DIP
HTNFET-TC HTNFET-TC Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 4-PIN
IPI65R099C6XKSA1 IPI65R099C6XKSA1 Infineon Technologies MOSFET N-CH 650V 38A TO-262
IPW60R041P6FKSA1 IPW60R041P6FKSA1 Infineon Technologies MOSFET N-CH 600V 77.5A TO247-3
SN7002N L6327 SN7002N L6327 Infineon Technologies MOSFET N-CH 60V 200MA SOT-23
SN7002N L6327 SN7002N L6327 Infineon Technologies MOSFET N-CH 60V 200MA SOT-23
SN7002N L6327 SN7002N L6327 Infineon Technologies MOSFET N-CH 60V 200MA SOT-23
BSD316SN L6327 BSD316SN L6327 Infineon Technologies MOSFET N-CH 30V 1.4A SOT-363
BSD316SN L6327 BSD316SN L6327 Infineon Technologies MOSFET N-CH 30V 1.4A SOT-363
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