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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSZ130N03MS G BSZ130N03MS G Infineon Technologies MOSFET N-CH 30V 35A TSDSON-8
BSZ130N03MS G BSZ130N03MS G Infineon Technologies MOSFET N-CH 30V 35A TSDSON-8
IPD50R800CE IPD50R800CE Infineon Technologies MOSFET N CH 500V 5A TO252
IPD50R800CE IPD50R800CE Infineon Technologies MOSFET N CH 500V 5A TO252
IPD50R800CE IPD50R800CE Infineon Technologies MOSFET N CH 500V 5A TO252
BSZ0904NSI BSZ0904NSI Infineon Technologies MOSFET N-CH 30V 40A TSDSON
BSZ0904NSI BSZ0904NSI Infineon Technologies MOSFET N-CH 30V 40A TSDSON
BSZ0904NSI BSZ0904NSI Infineon Technologies MOSFET N-CH 30V 40A TSDSON
IPB120N04S3-02 IPB120N04S3-02 Infineon Technologies MOSFET N-CH 40V 120A TO263-3
IPB120N04S3-02 IPB120N04S3-02 Infineon Technologies MOSFET N-CH 40V 120A TO263-3
IPB120N04S3-02 IPB120N04S3-02 Infineon Technologies MOSFET N-CH 40V 120A TO263-3
IPB090N06N3 G IPB090N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO263-3
IPB090N06N3 G IPB090N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO263-3
IPB090N06N3 G IPB090N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO263-3
IPD60R600P6 IPD60R600P6 Infineon Technologies MOSFET N-CH 600V 7.3A TO252
IPD60R600P6 IPD60R600P6 Infineon Technologies MOSFET N-CH 600V 7.3A TO252
IPD60R600P6 IPD60R600P6 Infineon Technologies MOSFET N-CH 600V 7.3A TO252
BSC030N04NS G BSC030N04NS G Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
BSC030N04NS G BSC030N04NS G Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
BSC030N04NS G BSC030N04NS G Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
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