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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPDH6N03LAG IPDH6N03LAG Infineon Technologies MOSFET N-CH 25V 50A TO252-3-11
IPDH6N03LAG IPDH6N03LAG Infineon Technologies MOSFET N-CH 25V 50A TO252-3-11
IPP80N06S2L-07 IPP80N06S2L-07 Infineon Technologies MOSFET N-CH 55V 80A TO220-3
BSZ0901NS BSZ0901NS Infineon Technologies MOSFET N-CH 30V S308
BSZ0901NS BSZ0901NS Infineon Technologies MOSFET N-CH 30V S308
BSZ0901NS BSZ0901NS Infineon Technologies MOSFET N-CH 30V S308
BSZ16DN25NS3 G BSZ16DN25NS3 G Infineon Technologies MOSFET N-CH 250V 10.9A 8TSDSON
BSZ16DN25NS3 G BSZ16DN25NS3 G Infineon Technologies MOSFET N-CH 250V 10.9A 8TSDSON
BSZ16DN25NS3 G BSZ16DN25NS3 G Infineon Technologies MOSFET N-CH 250V 10.9A 8TSDSON
SPB100N03S203T SPB100N03S203T Infineon Technologies MOSFET N-CH 30V 100A D2PAK
SPB100N03S203T SPB100N03S203T Infineon Technologies MOSFET N-CH 30V 100A D2PAK
BSF024N03LT3 G BSF024N03LT3 G Infineon Technologies MOSFET N-CH 30V 106A 2WDSON
BSF024N03LT3 G BSF024N03LT3 G Infineon Technologies MOSFET N-CH 30V 106A 2WDSON
BSF024N03LT3 G BSF024N03LT3 G Infineon Technologies MOSFET N-CH 30V 106A 2WDSON
BUZ31 H3045A BUZ31 H3045A Infineon Technologies MOSFET N-CH 200V 14.5A TO263
BUZ31 H3045A BUZ31 H3045A Infineon Technologies MOSFET N-CH 200V 14.5A TO263
BUZ31 H3045A BUZ31 H3045A Infineon Technologies MOSFET N-CH 200V 14.5A TO263
IPB60R385CP IPB60R385CP Infineon Technologies MOSFET N-CH 650V 9A TO-263
IPB60R385CP IPB60R385CP Infineon Technologies MOSFET N-CH 650V 9A TO-263
IPB60R385CP IPB60R385CP Infineon Technologies MOSFET N-CH 650V 9A TO-263
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