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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPD50P04P4L-11 IPD50P04P4L-11 Infineon Technologies MOSFET P-CH 40V 50A TO252-3
BSC050NE2LS BSC050NE2LS Infineon Technologies MOSFET N-CH 25V 39A TDSON-8
BSC050NE2LS BSC050NE2LS Infineon Technologies MOSFET N-CH 25V 39A TDSON-8
BSC050NE2LS BSC050NE2LS Infineon Technologies MOSFET N-CH 25V 39A TDSON-8
IPD90N03S4L-03 IPD90N03S4L-03 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
IPD90N03S4L-03 IPD90N03S4L-03 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
IPD90N03S4L-03 IPD90N03S4L-03 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
BSC052N03LS BSC052N03LS Infineon Technologies MOSFET N-CH 30V 17A TDSON-8
BSC052N03LS BSC052N03LS Infineon Technologies MOSFET N-CH 30V 17A TDSON-8
BSC052N03LS BSC052N03LS Infineon Technologies MOSFET N-CH 30V 17A TDSON-8
BSC054N04NS G BSC054N04NS G Infineon Technologies MOSFET N-CH 40V 81A TDSON-8
BSC052N03LS BSC052N03LS Infineon Technologies MOSFET N-CH 30V 17A TDSON-8
BSC052N03LS BSC052N03LS Infineon Technologies MOSFET N-CH 30V 17A TDSON-8
BSC052N03LS BSC052N03LS Infineon Technologies MOSFET N-CH 30V 17A TDSON-8
BSC054N04NS G BSC054N04NS G Infineon Technologies MOSFET N-CH 40V 81A TDSON-8
BSC054N04NS G BSC054N04NS G Infineon Technologies MOSFET N-CH 40V 81A TDSON-8
BSC054N04NS G BSC054N04NS G Infineon Technologies MOSFET N-CH 40V 81A TDSON-8
BSC050N04LS G BSC050N04LS G Infineon Technologies MOSFET N-CH 40V 85A TDSON-8
BSC050N04LS G BSC050N04LS G Infineon Technologies MOSFET N-CH 40V 85A TDSON-8
BSC050N04LS G BSC050N04LS G Infineon Technologies MOSFET N-CH 40V 85A TDSON-8
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