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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSF030NE2LQ BSF030NE2LQ Infineon Technologies MOSFET N-CH 25V 24A WDSON-2
BSF030NE2LQ BSF030NE2LQ Infineon Technologies MOSFET N-CH 25V 24A WDSON-2
BSF030NE2LQ BSF030NE2LQ Infineon Technologies MOSFET N-CH 25V 24A WDSON-2
BSZ035N03MS G BSZ035N03MS G Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8
BSZ035N03MS G BSZ035N03MS G Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8
BSZ035N03MS G BSZ035N03MS G Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8
BSZ040N04LS G BSZ040N04LS G Infineon Technologies MOSFET N-CH 40V 40A TSDSON-8
BSZ040N04LS G BSZ040N04LS G Infineon Technologies MOSFET N-CH 40V 40A TSDSON-8
BSZ040N04LS G BSZ040N04LS G Infineon Technologies MOSFET N-CH 40V 40A TSDSON-8
BSC030N03MS G BSC030N03MS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC030N03MS G BSC030N03MS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC030N03MS G BSC030N03MS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSZ036NE2LS BSZ036NE2LS Infineon Technologies MOSFET N-CH 25V 16A TSDSON-8
BSZ036NE2LS BSZ036NE2LS Infineon Technologies MOSFET N-CH 25V 16A TSDSON-8
BSZ036NE2LS BSZ036NE2LS Infineon Technologies MOSFET N-CH 25V 16A TSDSON-8
BSZ067N06LS3 G BSZ067N06LS3 G Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8
BSZ067N06LS3 G BSZ067N06LS3 G Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8
BSZ067N06LS3 G BSZ067N06LS3 G Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8
BSC067N06LS3 G BSC067N06LS3 G Infineon Technologies MOSFET N-CH 60V 50A TDSON-8
BSC067N06LS3 G BSC067N06LS3 G Infineon Technologies MOSFET N-CH 60V 50A TDSON-8
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