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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSC067N06LS3 G BSC067N06LS3 G Infineon Technologies MOSFET N-CH 60V 50A TDSON-8
BSC030N03LS G BSC030N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC030N03LS G BSC030N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC030N03LS G BSC030N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC076N06NS3 G BSC076N06NS3 G Infineon Technologies MOSFET N-CH 60V 50A TDSON-8
BSC076N06NS3 G BSC076N06NS3 G Infineon Technologies MOSFET N-CH 60V 50A TDSON-8
BSC076N06NS3 G BSC076N06NS3 G Infineon Technologies MOSFET N-CH 60V 50A TDSON-8
BSC22DN20NS3 G BSC22DN20NS3 G Infineon Technologies MOSFET N-CH 200V 7A 8TDSON
BSZ42DN25NS3 G BSZ42DN25NS3 G Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8
BSZ42DN25NS3 G BSZ42DN25NS3 G Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8
BSZ42DN25NS3 G BSZ42DN25NS3 G Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8
BSZ123N08NS3 G BSZ123N08NS3 G Infineon Technologies MOSFET N-CH 80V 40A TSDSON-8
BSZ123N08NS3 G BSZ123N08NS3 G Infineon Technologies MOSFET N-CH 80V 40A TSDSON-8
BSZ123N08NS3 G BSZ123N08NS3 G Infineon Technologies MOSFET N-CH 80V 40A TSDSON-8
BSC035N04LS G BSC035N04LS G Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
BSC035N04LS G BSC035N04LS G Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
BSC035N04LS G BSC035N04LS G Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
SPD07N20 G SPD07N20 G Infineon Technologies MOSFET N-CH 200V 7A TO252
SPD07N20 G SPD07N20 G Infineon Technologies MOSFET N-CH 200V 7A TO252
SPD07N20 G SPD07N20 G Infineon Technologies MOSFET N-CH 200V 7A TO252
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