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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSC0902NS BSC0902NS Infineon Technologies MOSFET N-CH 30V 100A 8TDSON
BSC0902NS BSC0902NS Infineon Technologies MOSFET N-CH 30V 100A 8TDSON
BSC0902NS BSC0902NS Infineon Technologies MOSFET N-CH 30V 100A 8TDSON
IPD036N04L G IPD036N04L G Infineon Technologies MOSFET N-CH 40V 90A TO252-3
IPD036N04L G IPD036N04L G Infineon Technologies MOSFET N-CH 40V 90A TO252-3
IPD036N04L G IPD036N04L G Infineon Technologies MOSFET N-CH 40V 90A TO252-3
IPD079N06L3 G IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3
IPD079N06L3 G IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3
IPD079N06L3 G IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3
IPD088N06N3 G IPD088N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3
IPD088N06N3 G IPD088N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3
IPD088N06N3 G IPD088N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3
IPD079N06L3 G IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3
IPD079N06L3 G IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3
IPD079N06L3 G IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3
BSZ0902NSI BSZ0902NSI Infineon Technologies MOSFET N-CH 30V 21A TSDSON-8
BSZ0902NSI BSZ0902NSI Infineon Technologies MOSFET N-CH 30V 21A TSDSON-8
BSZ0902NSI BSZ0902NSI Infineon Technologies MOSFET N-CH 30V 21A TSDSON-8
IPD90N03S4L-02 IPD90N03S4L-02 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
IPD90N03S4L-02 IPD90N03S4L-02 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
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