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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPD90P03P4-04 IPD90P03P4-04 Infineon Technologies MOSFET P-CH 30V 90A TO252-3
IPD90P03P4-04 IPD90P03P4-04 Infineon Technologies MOSFET P-CH 30V 90A TO252-3
IPD90P03P4-04 IPD90P03P4-04 Infineon Technologies MOSFET P-CH 30V 90A TO252-3
BSZ0901NSI BSZ0901NSI Infineon Technologies MOSFET N-CH 30V 40A TSDSON
BSZ0901NSI BSZ0901NSI Infineon Technologies MOSFET N-CH 30V 40A TSDSON
BSZ0901NSI BSZ0901NSI Infineon Technologies MOSFET N-CH 30V 40A TSDSON
BSZ018NE2LSI BSZ018NE2LSI Infineon Technologies MOSFET N-CH 25V 22A TSDSON-8
BSZ018NE2LSI BSZ018NE2LSI Infineon Technologies MOSFET N-CH 25V 22A TSDSON-8
BSZ018NE2LSI BSZ018NE2LSI Infineon Technologies MOSFET N-CH 25V 22A TSDSON-8
BSC010NE2LS BSC010NE2LS Infineon Technologies MOSFET N-CH 25V 39A TDSON-8
BSC010NE2LS BSC010NE2LS Infineon Technologies MOSFET N-CH 25V 39A TDSON-8
BSC010NE2LS BSC010NE2LS Infineon Technologies MOSFET N-CH 25V 39A TDSON-8
BSC011N03LS BSC011N03LS Infineon Technologies MOSFET N-CH 30V 100A 8TDSON
BSC011N03LS BSC011N03LS Infineon Technologies MOSFET N-CH 30V 100A 8TDSON
BSC011N03LS BSC011N03LS Infineon Technologies MOSFET N-CH 30V 100A 8TDSON
SPD30P06P G SPD30P06P G Infineon Technologies MOSFET P-CH 60V 30A TO252-3
SPD30P06P G SPD30P06P G Infineon Technologies MOSFET P-CH 60V 30A TO252-3
SPD30P06P G SPD30P06P G Infineon Technologies MOSFET P-CH 60V 30A TO252-3
BSC014N03LS G BSC014N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC014N03LS G BSC014N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
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