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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSB014N04LX3 G BSB014N04LX3 G Infineon Technologies MOSFET N-CH 40V 180A 2WDSON
BSB014N04LX3 G BSB014N04LX3 G Infineon Technologies MOSFET N-CH 40V 180A 2WDSON
BSB044N08NN3 G BSB044N08NN3 G Infineon Technologies MOSFET N-CH 80V 18A WDSON-2
BSB044N08NN3 G BSB044N08NN3 G Infineon Technologies MOSFET N-CH 80V 18A WDSON-2
BSB044N08NN3 G BSB044N08NN3 G Infineon Technologies MOSFET N-CH 80V 18A WDSON-2
BSB056N10NN3 G BSB056N10NN3 G Infineon Technologies MOSFET N-CH 100V 9A WDSON-2
BSB056N10NN3 G BSB056N10NN3 G Infineon Technologies MOSFET N-CH 100V 9A WDSON-2
BSB056N10NN3 G BSB056N10NN3 G Infineon Technologies MOSFET N-CH 100V 9A WDSON-2
BSB165N15NZ3 G BSB165N15NZ3 G Infineon Technologies MOSFET N-CH 150V 9A WDSON-2
BSB165N15NZ3 G BSB165N15NZ3 G Infineon Technologies MOSFET N-CH 150V 9A WDSON-2
BSB165N15NZ3 G BSB165N15NZ3 G Infineon Technologies MOSFET N-CH 150V 9A WDSON-2
IPD025N06N IPD025N06N Infineon Technologies MOSFET N-CH 60V 26A TO252-3
IPD025N06N IPD025N06N Infineon Technologies MOSFET N-CH 60V 26A TO252-3
IPD025N06N IPD025N06N Infineon Technologies MOSFET N-CH 60V 26A TO252-3
IPL60R199CP IPL60R199CP Infineon Technologies MOSFET N-CH 650V 16.4A 4VSON
IPL60R199CP IPL60R199CP Infineon Technologies MOSFET N-CH 650V 16.4A 4VSON
IPL60R199CP IPL60R199CP Infineon Technologies MOSFET N-CH 650V 16.4A 4VSON
IPB017N06N3 G IPB017N06N3 G Infineon Technologies MOSFET N-CH 60V 180A TO263-7
IPB017N06N3 G IPB017N06N3 G Infineon Technologies MOSFET N-CH 60V 180A TO263-7
IPB017N06N3 G IPB017N06N3 G Infineon Technologies MOSFET N-CH 60V 180A TO263-7
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