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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APT32F120J APT32F120J Microsemi Power Products Group MOSFET N-CH 1200V 33A SOT-227
APTM120DA56T1G APTM120DA56T1G Microsemi Power Products Group MOSFET N-CH 1200V 18A SP1
APTM120SK56T1G APTM120SK56T1G Microsemi Power Products Group MOSFET N-CH 1200V 18A SP1
APT80M60J APT80M60J Microsemi Power Products Group MOSFET N-CH 600V 84A SOT-227
APT26M100JCU2 APT26M100JCU2 Microsemi Power Products Group MOSFET N-CH 1000V 26A SOT227
APT60M80JVR APT60M80JVR Microsemi Power Products Group MOSFET N-CH 600V 55A SOT-227
APTC80H29T3G APTC80H29T3G Microsemi Power Products Group MOSFET 4N-CH 800V 15A SP3
APT50N60JCCU2 APT50N60JCCU2 Microsemi Power Products Group MOSFET N-CH 600V 50A SOT-227
APT45M100J APT45M100J Microsemi Power Products Group MOSFET N-CH 1000V 45A SOT-227
APTM50H15FT1G APTM50H15FT1G Microsemi Power Products Group MOSFET 4N-CH 500V 25A SP1
APTM10DDAM19T3G APTM10DDAM19T3G Microsemi Power Products Group MOSFET 2N-CH 100V 70A SP3
APTM10DSKM19T3G APTM10DSKM19T3G Microsemi Power Products Group MOSFET 2N-CH 100V 70A SP3
APT80F60J APT80F60J Microsemi Power Products Group MOSFET N-CH 600V 84A SOT-227
APTC80DDA15T3G APTC80DDA15T3G Microsemi Power Products Group MOSFET 2N-CH 800V 28A SP3
APTC80DSK15T3G APTC80DSK15T3G Microsemi Power Products Group MOSFET 2N-CH 800V 28A SP3
APT20M11JVR APT20M11JVR Microsemi Power Products Group MOSFET N-CH 200V 175A SOT-227
APTC60AM45T1G APTC60AM45T1G Microsemi Power Products Group MOSFET 2N-CH 600V 49A SP1
APTM60H23FT1G APTM60H23FT1G Microsemi Power Products Group MOSFET 4N-CH 600V 20A SP1
APT60M75JLL APT60M75JLL Microsemi Power Products Group MOSFET N-CH 600V 58A SOT-227
APTM120DA30T1G APTM120DA30T1G Microsemi Power Products Group MOSFET N-CH 1200V 31A SP1
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