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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APT30M19JVR APT30M19JVR Microsemi Power Products Group MOSFET N-CH 300V 130A SOT-227
APTM60A11FT1G APTM60A11FT1G Microsemi Power Products Group MOSFET 2N-CH 600V 40A SP1
APTC60DAM24T1G APTC60DAM24T1G Microsemi Power Products Group MOSFET N-CH 600V 95A SP1
APTC80H15T1G APTC80H15T1G Microsemi Power Products Group MOSFET 4N-CH 800V 28A SP1
APTC60AM35T1G APTC60AM35T1G Microsemi Power Products Group MOSFET 2N-CH 600V 72A SP1
APTC60HM70T1G APTC60HM70T1G Microsemi Power Products Group MOSFET 4N-CH 600V 39A SP1
APT30M19JVFR APT30M19JVFR Microsemi Power Products Group MOSFET N-CH 300V 130A SOT-227
APTM50DDA10T3G APTM50DDA10T3G Microsemi Power Products Group MOSFET 2N-CH 500V 37A SP3
APTM50DSK10T3G APTM50DSK10T3G Microsemi Power Products Group MOSFET 2N-CH 500V 37A SP3
APT20M11JVFR APT20M11JVFR Microsemi Power Products Group MOSFET N-CH 200V 175A SOT-227
APT60M75JVR APT60M75JVR Microsemi Power Products Group MOSFET N-CH 600V 62A SOT-227
APT40M35JVFR APT40M35JVFR Microsemi Power Products Group MOSFET N-CH 400V 93A SOT-227
APTC80H15T3G APTC80H15T3G Microsemi Power Products Group MOSFET 4N-CH 800V 28A SP3
APTC60HM70T3G APTC60HM70T3G Microsemi Power Products Group MOSFET 4N-CH 600V 39A SP3
APL602J APL602J Microsemi Power Products Group MOSFET N-CH 600V 43A SOT-227
APT60M75JVFR APT60M75JVFR Microsemi Power Products Group MOSFET N-CH 600V 62A SOT-227
APTC90DDA12T1G APTC90DDA12T1G Microsemi Power Products Group MOSFET 2N-CH 900V 30A SP1
APTC90DSK12T1G APTC90DSK12T1G Microsemi Power Products Group MOSFET 2N-CH 900V 30A SP1
APTC90SKM60T1G APTC90SKM60T1G Microsemi Power Products Group MOSFET N-CH 900V 59A SP1
APT60M60JLL APT60M60JLL Microsemi Power Products Group MOSFET N-CH 600V 70A SOT-227
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