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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IXTN170P10P IXTN170P10P IXYS MOSFET P-CH 100V 170A SOT227
IXFN200N07 IXFN200N07 IXYS MOSFET N-CH 70V 200A SOT-227B
IXFN230N20T IXFN230N20T IXYS MOSFET N-CH 200V 220A SOT-227
IXFN24N100 IXFN24N100 IXYS MOSFET N-CH 1KV 24A SOT-227B
IXFN280N085 IXFN280N085 IXYS MOSFET N-CH 85V 280A SOT-227B
IXFN360N15T2 IXFN360N15T2 IXYS MOSFET N-CH 150V 310A SOT227
IXFN320N17T2 IXFN320N17T2 IXYS MOSFET N-CH 170V 260A SOT227
IXTN200N10L2 IXTN200N10L2 IXYS MOSFET N-CH 100V 178A SOT-227
IXTN60N50L2 IXTN60N50L2 IXYS MOSFET N-CH 500V 53A SOT-227
IXFN56N90P IXFN56N90P IXYS MOSFET N-CH 900V 56A SOT-227B
IXFN340N07 IXFN340N07 IXYS MOSFET N-CH 70V 340A SOT-227B
IXFN230N10 IXFN230N10 IXYS MOSFET N-CH 100V 230A SOT-227B
VMO580-02F VMO580-02F IXYS MOSFET N-CH 200V 580A MODULE
VMO1200-01F VMO1200-01F IXYS MOSFET N-CH 100V 1245A Y3-LI
IXFN160N30T IXFN160N30T IXYS MOSFET N-CH 300V 130A SOT227
IXFN64N60P IXFN64N60P IXYS MOSFET N-CH 600V 50A SOT-227
IXFN82N60P IXFN82N60P IXYS MOSFET N-CH 600V 72A SOT-227B
IXTN90N25L2 IXTN90N25L2 IXYS MOSFET N-CH 250V 90A SOT-227
IXFN44N50 IXFN44N50 IXYS MOSFET N-CH 500V 44A SOT-227B
IXTN600N04T2 IXTN600N04T2 IXYS MOSFET N-CH 40V 600A SOT-227
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