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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APTM10DUM02G APTM10DUM02G Microsemi Power Products Group MOSFET 2N-CH 100V 495A SP6
APTM20DUM05G APTM20DUM05G Microsemi Power Products Group MOSFET 2N-CH 200V 317A SP6
APTM100A13DG APTM100A13DG Microsemi Power Products Group MOSFET 2N-CH 1000V 65A SP6
APTM120TDU57PG APTM120TDU57PG Microsemi Power Products Group MOSFET 6N-CH 1200V 17A SP6-P
APTM120A20DG APTM120A20DG Microsemi Power Products Group MOSFET 2N-CH 1200V 50A SP6
APTM20TAM16FPG APTM20TAM16FPG Microsemi Power Products Group MOSFET 6N-CH 200V 104A SP6-P
APTM120A20SG APTM120A20SG Microsemi Power Products Group MOSFET 2N-CH 1200V 50A SP6
APTM50TAM65FPG APTM50TAM65FPG Microsemi Power Products Group MOSFET 6N-CH 500V 51A SP6-P
APTM20HM10FG APTM20HM10FG Microsemi Power Products Group MOSFET 4N-CH 200V 175A SP6
APTC60TAM24TPG APTC60TAM24TPG Microsemi Power Products Group MOSFET 6N-CH 600V 95A SP6-P
APTM100TA35FPG APTM100TA35FPG Microsemi Power Products Group MOSFET 6N-CH 1000V 22A SP6-P
APTM100UM65DAG APTM100UM65DAG Microsemi Power Products Group MOSFET N-CH 1000V 145A SP6
APTM20AM05FG APTM20AM05FG Microsemi Power Products Group MOSFET 2N-CH 200V 317A SP6
APTM20DUM04G APTM20DUM04G Microsemi Power Products Group MOSFET 2N-CH 200V 372A SP6
APTM50HM38FG APTM50HM38FG Microsemi Power Products Group MOSFET 4N-CH 500V 90A SP6
APTM50AM19FG APTM50AM19FG Microsemi Power Products Group MOSFET 2N-CH 500V 163A SP6
APTM50UM13SAG APTM50UM13SAG Microsemi Power Products Group MOSFET N-CH 500V 335A SP6
APTM50DUM17G APTM50DUM17G Microsemi Power Products Group MOSFET 2N-CH 500V 180A SP6
APTM120U10SAG APTM120U10SAG Microsemi Power Products Group MOSFET N-CH 1200V 116A SP6
APTM100DUM90G APTM100DUM90G Microsemi Power Products Group MOSFET 2N-CH 1000V 78A SP6
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