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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IXFE44N50Q IXFE44N50Q IXYS MOSFET N-CH 500V 39A SOT-227B
IXTN36N50 IXTN36N50 IXYS MOSFET N-CH 500V 36A SOT-227
IXFN102N30P IXFN102N30P IXYS MOSFET N-CH 300V 88A SOT227B
IXFN32N80P IXFN32N80P IXYS MOSFET N-CH 800V 29A SOT-227B
IXFN80N60P3 IXFN80N60P3 IXYS MOSFET N-CH 600V 66A SOT-227B
IXFE180N10 IXFE180N10 IXYS MOSFET N-CH 100V 176A ISOPLUS227
IXFN420N10T IXFN420N10T IXYS MOSFET N-CH 100V 420A SOT-227
IXFN44N80P IXFN44N80P IXYS MOSFET N-CH 800V 39A SOT-227B
IXFE73N30Q IXFE73N30Q IXYS MOSFET N-CH 300V 66A SOT-227B
IXFN48N50Q IXFN48N50Q IXYS MOSFET N-CH 500V 48A SOT-227B
GWM100-0085X1-SMD GWM100-0085X1-SMD IXYS MOSFET 6N-CH 85V 103A ISOPLUS
IXFN44N50Q IXFN44N50Q IXYS MOSFET N-CH 500V 44A SOT-227B
IXFN100N20 IXFN100N20 IXYS MOSFET N-CH 200V 100A SOT-227B
IXTE250N10 IXTE250N10 IXYS MOSFET N-CH 100V 250A ISOPLUS227
IXFN140N25T IXFN140N25T IXYS MOSFET N-CH 250V 120A SOT-227
GWM100-01X1-SLSAM GWM100-01X1-SLSAM IXYS MOSFET 6N-CH 100V 90A ISOPLUS
GWM100-01X1-SMDSAM GWM100-01X1-SMDSAM IXYS MOSFET 6N-CH 100V 90A ISOPLUS
IXFN180N07 IXFN180N07 IXYS MOSFET N-CH 70V 180A SOT-227B
IXFN100N25 IXFN100N25 IXYS MOSFET N-CH 250V 100A SOT-227B
IXFN240N15T2 IXFN240N15T2 IXYS MOSFET N-CH 150V 240A SOT227
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