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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ALD1116SAL ALD1116SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD1103PBL ALD1103PBL Advanced Linear Devices Inc MOSFET 2N/2P-CH 10.6V 14DIP
ALD114835SCL ALD114835SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16SOIC
ALD1101PAL ALD1101PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD110808ASCL ALD110808ASCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16SOIC
ALD1115SAL ALD1115SAL Advanced Linear Devices Inc MOSFET N/P-CH 10.6V 8SOIC
ALD111910PAL ALD111910PAL Advanced Linear Devices Inc MOSFET 2N-CH 8DIP
ALD111910SAL ALD111910SAL Advanced Linear Devices Inc MOSFET 2N-CH 8SOIC
ALD110908SAL ALD110908SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD111933MAL ALD111933MAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8MSOP
ALD114904PAL ALD114904PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD111910MAL ALD111910MAL Advanced Linear Devices Inc MOSFET 2N-CH 8MSOP
ALD1115MAL ALD1115MAL Advanced Linear Devices Inc MOSFET N/P-CH 10.6V 8MSOP
ALD212900SAL ALD212900SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8SOIC
ALD212902PAL ALD212902PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8DIP
ALD212902SAL ALD212902SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8SOIC
ALD212904PAL ALD212904PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8DIP
ALD212904SAL ALD212904SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8SOIC
ALD212908PAL ALD212908PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8DIP
ALD212908SAL ALD212908SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8SOIC
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