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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4913DY-T1-GE3 SI4913DY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 7.1A 8-SOIC
SI4913DY-T1-GE3 SI4913DY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 7.1A 8-SOIC
SI4947ADY-T1-GE3 SI4947ADY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 3A 8-SOIC
SI4947ADY-T1-GE3 SI4947ADY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 3A 8-SOIC
SI4947ADY-T1-GE3 SI4947ADY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 3A 8-SOIC
SI4953ADY-T1-GE3 SI4953ADY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 3.7A 8-SOIC
SI4953ADY-T1-GE3 SI4953ADY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 3.7A 8-SOIC
SI4992EY-T1-GE3 SI4992EY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 75V 3.6A 8-SOIC
SI4992EY-T1-GE3 SI4992EY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 75V 3.6A 8-SOIC
SI4992EY-T1-GE3 SI4992EY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 75V 3.6A 8-SOIC
SI5511DC-T1-GE3 SI5511DC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 4A 1206-8
SI5511DC-T1-GE3 SI5511DC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 4A 1206-8
SI5511DC-T1-GE3 SI5511DC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 4A 1206-8
SI5904DC-T1-GE3 SI5904DC-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 3.1A 1206-8
SI5904DC-T1-GE3 SI5904DC-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 3.1A 1206-8
SI5904DC-T1-GE3 SI5904DC-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 3.1A 1206-8
SI5920DC-T1-GE3 SI5920DC-T1-GE3 Vishay Siliconix MOSFET 2N-CH 8V 4A 1206-8
SI5920DC-T1-GE3 SI5920DC-T1-GE3 Vishay Siliconix MOSFET 2N-CH 8V 4A 1206-8
SI5920DC-T1-GE3 SI5920DC-T1-GE3 Vishay Siliconix MOSFET 2N-CH 8V 4A 1206-8
SI5980DU-T1-GE3 SI5980DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 2.5A CHIPFET
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