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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI5980DU-T1-GE3 SI5980DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 2.5A CHIPFET
SI6544BDQ-T1-GE3 SI6544BDQ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 3.7A 8-TSSOP
SI6544BDQ-T1-GE3 SI6544BDQ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 3.7A 8-TSSOP
SI6544BDQ-T1-GE3 SI6544BDQ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 3.7A 8-TSSOP
SI6924AEDQ-T1-GE3 SI6924AEDQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 28V 4.1A 8-TSSOP
SI6924AEDQ-T1-GE3 SI6924AEDQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 28V 4.1A 8-TSSOP
SI6924AEDQ-T1-GE3 SI6924AEDQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 28V 4.1A 8-TSSOP
SI6981DQ-T1-GE3 SI6981DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.1A 8-TSSOP
SI6981DQ-T1-GE3 SI6981DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.1A 8-TSSOP
SI6981DQ-T1-GE3 SI6981DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.1A 8-TSSOP
SI6993DQ-T1-GE3 SI6993DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 3.6A 8-TSSOP
SI6993DQ-T1-GE3 SI6993DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 3.6A 8-TSSOP
SI6993DQ-T1-GE3 SI6993DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 3.6A 8-TSSOP
SI7222DN-T1-GE3 SI7222DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 6A PPAK 1212-8
SI7222DN-T1-GE3 SI7222DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 6A PPAK 1212-8
SI7222DN-T1-GE3 SI7222DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 6A PPAK 1212-8
SI7911DN-T1-GE3 SI7911DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.2A 1212-8
SI7911DN-T1-GE3 SI7911DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.2A 1212-8
SI7911DN-T1-GE3 SI7911DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.2A 1212-8
SI7946DP-T1-GE3 SI7946DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 150V 2.1A PPAK SO-8
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