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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7946DP-T1-GE3 SI7946DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 150V 2.1A PPAK SO-8
SI7946DP-T1-GE3 SI7946DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 150V 2.1A PPAK SO-8
SI9934BDY-T1-GE3 SI9934BDY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 8SOIC
SI9934BDY-T1-GE3 SI9934BDY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 8SOIC
SI9934BDY-T1-GE3 SI9934BDY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 8SOIC
SIA950DJ-T1-GE3 SIA950DJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 190V 0.95A SC-70-6
SIA950DJ-T1-GE3 SIA950DJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 190V 0.95A SC-70-6
SIA950DJ-T1-GE3 SIA950DJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 190V 0.95A SC-70-6
SIS902DN-T1-GE3 SIS902DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 75V 4A PPAK 1212-8
SIS902DN-T1-GE3 SIS902DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 75V 4A PPAK 1212-8
SIS902DN-T1-GE3 SIS902DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 75V 4A PPAK 1212-8
SI1557DH-T1-E3 SI1557DH-T1-E3 Vishay Siliconix MOSFET N/P-CH 12V 1.2A SC70-6
SI1563EDH-T1-GE3 SI1563EDH-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 1.13A SC70-6
SI1905BDH-T1-E3 SI1905BDH-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 0.63A SC70-6
SI1970DH-T1-GE3 SI1970DH-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 1.3A SC70-6
SI3529DV-T1-E3 SI3529DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 2.5A 6-TSOP
SI3529DV-T1-GE3 SI3529DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 2.5A 6-TSOP
SI3905DV-T1-E3 SI3905DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 6-TSOP
SI3905DV-T1-GE3 SI3905DV-T1-GE3 Vishay Siliconix MOSFET 2P-CH 8V 6-TSOP
SI3909DV-T1-E3 SI3909DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 6TSOP
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