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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI3909DV-T1-GE3 SI3909DV-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 6TSOP
SI3981DV-T1-GE3 SI3981DV-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 1.6A 6-TSOP
SI3983DV-T1-GE3 SI3983DV-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 2.1A 6-TSOP
SI4230DY-T1-GE3 SI4230DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SOIC
SI4310BDY-T1-E3 SI4310BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 7.5A 14SOIC
SI4330DY-T1-GE3 SI4330DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6.6A 8-SOIC
SI4539ADY-T1-GE3 SI4539ADY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 4.4A 8-SOIC
SI4542DY-T1-GE3 SI4542DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 8-SOIC
SI4544DY-T1-E3 SI4544DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 8-SOIC
SI4544DY-T1-GE3 SI4544DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 8-SOIC
SI4561DY-T1-E3 SI4561DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 6.8A 8-SOIC
SI4562DY-T1-GE3 SI4562DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 8-SOIC
SI4565ADY-T1-GE3 SI4565ADY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 6.6A 8-SOIC
SI4567DY-T1-GE3 SI4567DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 5A 8-SOIC
SI4569DY-T1-GE3 SI4569DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 7.6A 8-SOIC
SI4804BDY-T1-GE3 SI4804BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 5.7A 8SOIC
SI4816DY-T1-GE3 SI4816DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 5.3A 8-SOIC
SI4818DY-T1-E3 SI4818DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.3A 8-SOIC
SI4818DY-T1-GE3 SI4818DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 5.3A 8-SOIC
SI4830ADY-T1-GE3 SI4830ADY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 5.7A 8-SOIC
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