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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI5905BDC-T1-E3 SI5905BDC-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 4A 1206-8
SI5905BDC-T1-GE3 SI5905BDC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 8V 4A 1206-8
SI5905DC-T1-E3 SI5905DC-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 3A 1206-8
SI5905DC-T1-GE3 SI5905DC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 8V 3A 1206-8
SI5915BDC-T1-E3 SI5915BDC-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 4A 1206-8
SI5915BDC-T1-GE3 SI5915BDC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 8V 4A 1206-8
SI5915DC-T1-E3 SI5915DC-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 3.4A 1206-8
SI5915DC-T1-GE3 SI5915DC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 8V 3.4A 1206-8
SI5933DC-T1-GE3 SI5933DC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 2.7A 1206-8
SI5935DC-T1-GE3 SI5935DC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 3A 1206-8
SI5943DU-T1-GE3 SI5943DU-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 6A 8PWRPAK
SI5975DC-T1-E3 SI5975DC-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 3.1A CHIPFET
SI5975DC-T1-GE3 SI5975DC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 3.1A CHIPFET
SI6933DQ-T1-E3 SI6933DQ-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 8-TSSOP
SI6933DQ-T1-GE3 SI6933DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 8-TSSOP
SI6943BDQ-T1-GE3 SI6943BDQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 2.3A 8TSSOP
SI6955ADQ-T1-E3 SI6955ADQ-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 2.5A 8-TSSOP
SI6955ADQ-T1-GE3 SI6955ADQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 2.5A 8-TSSOP
SI6966DQ-T1-E3 SI6966DQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 4A 8TSSOP
SI6966DQ-T1-GE3 SI6966DQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4A 8TSSOP
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