中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 264265266267268269270271272273274
PDF 缩略图 器件名称 制造商 描述
SIZ916DT-T1-GE3 SIZ916DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR
SIZ920DT-T1-GE3 SIZ920DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 40A PWRPAIR
SIZ920DT-T1-GE3 SIZ920DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 40A PWRPAIR
SIZ920DT-T1-GE3 SIZ920DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 40A PWRPAIR
SI7900AEDN-T1-GE3 SI7900AEDN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 6A PPAK 1212-8
SI7900AEDN-T1-GE3 SI7900AEDN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 6A PPAK 1212-8
SI7900AEDN-T1-GE3 SI7900AEDN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 6A PPAK 1212-8
SI4622DY-T1-GE3 SI4622DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8-SOIC
SI4622DY-T1-GE3 SI4622DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8-SOIC
SI4622DY-T1-GE3 SI4622DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8-SOIC
SI1028X-T1-GE3 SI1028X-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V SC89-6
SI1034CX-T1-GE3 SI1034CX-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V SC89-6
SI1023CX-T1-GE3 SI1023CX-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V SC89-6
SI1902CDL-T1-GE3 SI1902CDL-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 1.1A SC-70-6
SI1016CX-T1-GE3 SI1016CX-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC89-6
SI1553CDL-T1-GE3 SI1553CDL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6
SI1967DH-T1-E3 SI1967DH-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 1.3A SC70-6
SI1926DL-T1-GE3 SI1926DL-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 0.37A SOT363
SI1033X-T1-GE3 SI1033X-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 0.145A SC89
SI1965DH-T1-E3 SI1965DH-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 1.3A SC70-6
1... 264265266267268269270271272273274