中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 264265266267268269270271272273274
PDF 缩略图 器件名称 制造商 描述
SI5933CDC-T1-E3 SI5933CDC-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 3.7A 1206-8
SI3993CDV-T1-GE3 SI3993CDV-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 2.9A 6-TSOP
SI5935CDC-T1-E3 SI5935CDC-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 4A 1206-8
SIA911ADJ-T1-GE3 SIA911ADJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SI3585CDV-T1-GE3 SI3585CDV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 3.9A 6TSOP
SIA907EDJT-T1-GE3 SIA907EDJT-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC-70-6L
SIA936EDJ-T1-GE3 SIA936EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC-70
SIA936EDJ-T1-GE3 SIA936EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC-70
SIA936EDJ-T1-GE3 SIA936EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC-70
SI5513CDC-T1-E3 SI5513CDC-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8
SIA777EDJ-T1-GE3 SIA777EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V/12V SC70-6L
SI4200DY-T1-GE3 SI4200DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8SOIC
SIA915DJ-T1-GE3 SIA915DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 4.5A SC-70-6L
SIA920DJ-T1-GE3 SIA920DJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 8V 4.5A SC-70
SI4936CDY-T1-E3 SI4936CDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.8A 8SO
SIA929DJ-T1-GE3 SIA929DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 4.5A SC70-6
SIA921EDJ-T4-GE3 SIA921EDJ-T4-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SI5997DU-T1-GE3 SI5997DU-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 6A PPAK CHIPFET
SI4214DY-T1-GE3 SI4214DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8.5A 8-SOIC
SI4804CDY-T1-E3 SI4804CDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8A 8SO
1... 264265266267268269270271272273274