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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ALD1108EPCL ALD1108EPCL Advanced Linear Devices Inc MOSFET 4N-CH 10V 16DIP
ALD210808APCL ALD210808APCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16DIP
ALD210808ASCL ALD210808ASCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16SOIC
ALD1101BPAL ALD1101BPAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD1102BPAL ALD1102BPAL Advanced Linear Devices Inc MOSFET 2P-CH 10.6V 8DIP
ALD1102BSAL ALD1102BSAL Advanced Linear Devices Inc MOSFET 2P-CH 10.6V 8SOIC
ALD1101BSAL ALD1101BSAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD1101APAL ALD1101APAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD1116PAL ALD1116PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD1115PAL ALD1115PAL Advanced Linear Devices Inc MOSFET N/P-CH 10.6V 8DIP
ALD111933SAL ALD111933SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD1106PBL ALD1106PBL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 14DIP
ALD1107PBL ALD1107PBL Advanced Linear Devices Inc MOSFET 4P-CH 10.6V 14DIP
ALD1106SBL ALD1106SBL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 14SOIC
ALD1105PBL ALD1105PBL Advanced Linear Devices Inc MOSFET 2N/2P-CH 10.6V 14DIP
ALD110900APAL ALD110900APAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD1117PAL ALD1117PAL Advanced Linear Devices Inc MOSFET 2P-CH 10.6V 8DIP
ALD1117SAL ALD1117SAL Advanced Linear Devices Inc MOSFET 2P-CH 10.6V 8SOIC
ALD110914SAL ALD110914SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD1107SBL ALD1107SBL Advanced Linear Devices Inc MOSFET 4P-CH 10.6V 14SOIC
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