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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ALD110914PAL ALD110914PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD114904SAL ALD114904SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD110908ASAL ALD110908ASAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD110908APAL ALD110908APAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD114935SAL ALD114935SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8SOIC
ALD114935PAL ALD114935PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD114813SCL ALD114813SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16SOIC
ALD110800SCL ALD110800SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16SOIC
ALD114804ASCL ALD114804ASCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16SOIC
ALD1102APAL ALD1102APAL Advanced Linear Devices Inc MOSFET 2P-CH 10.6V 8DIP
ALD114913PAL ALD114913PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD114804SCL ALD114804SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16SOIC
ALD110800PCL ALD110800PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16DIP
ALD110804PCL ALD110804PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16DIP
ALD110802PCL ALD110802PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16DIP
ALD210800SCL ALD210800SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16SOIC
ALD110800APCL ALD110800APCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16DIP
ALD210800ASCL ALD210800ASCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16SOIC
ALD111933PAL ALD111933PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
ALD110904PAL ALD110904PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 8DIP
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