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厂商 系列IGBT类型配置电压-集射极击穿(最大值)电流-集电极(Ic)(最大值)功率-最大值不同Vge,Ic时的Vce(on)电流-集电极截止(最大值)不同Vce时的输入电容(Cies)输入NTC热敏电阻安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
CPV363M4F CPV363M4F Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 9A IMS-2
CPV364M4F CPV364M4F Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 15A IMS-2
GA400TD25S GA400TD25S Vishay Semiconductor Diodes Division IGBT FAST 250V 400A INT-A-PAK
GA200SA60U GA200SA60U Vishay Semiconductor Diodes Division IGBT UFAST 600V 100A SOT227
GA200SA60S GA200SA60S Vishay Semiconductor Diodes Division IGBT STD 600V 100A SOT227
50MT060WH 50MT060WH Vishay Semiconductor Diodes Division IGBT WARP 600V 114A MTP
50MT060ULS 50MT060ULS Vishay Semiconductor Diodes Division IGBT UFAST 600V 100A MTP
GB35XF120K GB35XF120K Vishay Semiconductor Diodes Division MODULE IGBT 1200V 35A ECONO2 6PK
VS-CPV363M4KPBF VS-CPV363M4KPBF Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP
VS-GA100NA60UP VS-GA100NA60UP Vishay Semiconductor Diodes Division IGBT 600V 100A 250W SOT-227
VS-GA100TS120UPBF VS-GA100TS120UPBF Vishay Semiconductor Diodes Division IGBT 1200V 182A 520W INT-A-PAK
VS-GA200SA60SP VS-GA200SA60SP Vishay Semiconductor Diodes Division MODULE IGBT SOT-227
VS-GB100DA60UP VS-GB100DA60UP Vishay Semiconductor Diodes Division MODULE IGBT SOT-227
VS-GB50LA120UX VS-GB50LA120UX Vishay Semiconductor Diodes Division IGBT 1200V 84A 431W SOT-227
VS-GB50NA120UX VS-GB50NA120UX Vishay Semiconductor Diodes Division IGBT 1200V 84A 431W SOT-227
VS-GB70LA60UF VS-GB70LA60UF Vishay Semiconductor Diodes Division IGBT 600V 111A 447W SOT-227
VS-GB70NA60UF VS-GB70NA60UF Vishay Semiconductor Diodes Division IGBT 600V 111A 447W SOT-227
VS-GB75DA120UP VS-GB75DA120UP Vishay Semiconductor Diodes Division MODULE IGBT SOT-227
VS-GB75SA120UP VS-GB75SA120UP Vishay Semiconductor Diodes Division MODULE IGBT SOT-227
VS-GT100DA120U VS-GT100DA120U Vishay Semiconductor Diodes Division IGBT 1200V 258A 893W SOT-227
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