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厂商 包装系列二极管配置二极管类型电压-DC反向(Vr)(最大值)电流-平均整流(Io)(每二极管)不同If时的电压-正向(Vf)速度反向恢复时间(trr)不同Vr时的电流-反向漏电流安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BAS70SV BAS70SV Fairchild Semiconductor DIODE ARRAY SCHOTTKY 70V SOT563
BAS70SV BAS70SV Fairchild Semiconductor DIODE ARRAY SCHOTTKY 70V SOT563
FFB20UP20DN_F085 FFB20UP20DN_F085 Fairchild Semiconductor DIODE ARRAY GP 200V 10A D2PAK
RURD620CCS9A_F085 RURD620CCS9A_F085 Fairchild Semiconductor DIODE ARRAY GP 200V 6A DPAK
MURT10020 MURT10020 GeneSiC Semiconductor DIODE ARRAY GP 200V 100A 3TOWER
MURT10020R MURT10020R GeneSiC Semiconductor DIODE ARRAY GP REV POLAR 3TOWER
MURT10040 MURT10040 GeneSiC Semiconductor DIODE ARRAY GP 400V 100A 3TOWER
MURT10040R MURT10040R GeneSiC Semiconductor DIODE ARRAY GP REV POLAR3TOWER
MURT10060 MURT10060 GeneSiC Semiconductor DIODE ARRAY GP 600V 100A 3TOWER
MURT10060R MURT10060R GeneSiC Semiconductor DIODE ARRAY GP REV POLAR 3TOWER
GDP24D060B GDP24D060B Global Power Technologies Group DIODE SCHOTTKY 600V 23A TO247-3
GDP60D120B GDP60D120B Global Power Technologies Group DIODE SCHOTTKY 1200V 56A TO247-3
GDP60Y120B GDP60Y120B Global Power Technologies Group DIODE SCHOTTKY 1200V 56A TO247-3
GDP48Y060B GDP48Y060B Global Power Technologies Group DIODE SCHOTTKY 600V 31A TO247-3
GDP30D120B GDP30D120B Global Power Technologies Group DIODE SCHOTTKY 1200V 28A TO247-3
BAV 199 E6433 BAV 199 E6433 Infineon Technologies DIODE ARRAY GP 80V 200MA SOT23
BAV 199 E6433 BAV 199 E6433 Infineon Technologies DIODE ARRAY GP 80V 200MA SOT23
BAV 199 E6433 BAV 199 E6433 Infineon Technologies DIODE ARRAY GP 80V 200MA SOT23
BAV 70 E6327 BAV 70 E6327 Infineon Technologies DIODE ARRAY GP 80V 200MA SOT23
BAV 70 E6327 BAV 70 E6327 Infineon Technologies DIODE ARRAY GP 80V 200MA SOT23
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