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厂商 包装系列电压-齐纳(标称值)(Vz)容差功率-最大值阻抗(最大值)(Zzt)不同Vr时的电流-反向漏电流不同If时的电压-正向(Vf)工作温度安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
CMZ12(TE12L,Q) CMZ12(TE12L,Q) Toshiba Semiconductor and Storage DIODE ZENER 12V 2W MFLAT
CMZ13(TE12L,Q) CMZ13(TE12L,Q) Toshiba Semiconductor and Storage DIODE ZENER 13V 2W MFLAT
CMZ15(TE12L,Q) CMZ15(TE12L,Q) Toshiba Semiconductor and Storage DIODE ZENER 15V 2W MFLAT
CMZ16(TE12L,Q) CMZ16(TE12L,Q) Toshiba Semiconductor and Storage DIODE ZENER 16V 2W MFLAT
CMZ18(TE12L,Q) CMZ18(TE12L,Q) Toshiba Semiconductor and Storage DIODE ZENER 18V 2W MFLAT
CMZ20(TE12L,Q) CMZ20(TE12L,Q) Toshiba Semiconductor and Storage DIODE ZENER 20V 2W MFLAT
CMZ22(TE12L,Q) CMZ22(TE12L,Q) Toshiba Semiconductor and Storage DIODE ZENER 22V 2W MFLAT
CMZ24(TE12L,Q) CMZ24(TE12L,Q) Toshiba Semiconductor and Storage DIODE ZENER 24V 2W MFLAT
CMZ27(TE12L,Q) CMZ27(TE12L,Q) Toshiba Semiconductor and Storage DIODE ZENER 27V 2W MFLAT
CMZM16(TE12N,Q) CMZM16(TE12N,Q) Toshiba Semiconductor and Storage DIODE ZENER 16V 1W MFLAT
BZD27C200P-E3-08 BZD27C200P-E3-08 Vishay Semiconductor Diodes Division DIODE ZENER 200V 800MW DO219AB
BZD27C200P-E3-08 BZD27C200P-E3-08 Vishay Semiconductor Diodes Division DIODE ZENER 200V 800MW DO219AB
BZD27C200P-E3-08 BZD27C200P-E3-08 Vishay Semiconductor Diodes Division DIODE ZENER 200V 800MW DO219AB
1N5237B-TR 1N5237B-TR Vishay Semiconductor Diodes Division DIODE ZENER 8.2V 500MW DO35
1N5237B-TR 1N5237B-TR Vishay Semiconductor Diodes Division DIODE ZENER 8.2V 500MW DO35
1N5234B-TR 1N5234B-TR Vishay Semiconductor Diodes Division DIODE ZENER 6.2V 500MW DO35
1N5234B-TR 1N5234B-TR Vishay Semiconductor Diodes Division DIODE ZENER 6.2V 500MW DO35
1N5235B-TR 1N5235B-TR Vishay Semiconductor Diodes Division DIODE ZENER 6.8V 500MW DO35
1N5235B-TR 1N5235B-TR Vishay Semiconductor Diodes Division DIODE ZENER 6.8V 500MW DO35
1N5242B-TR 1N5242B-TR Vishay Semiconductor Diodes Division DIODE ZENER 12V 500MW DO35
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