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产品索引  > 分立半导体产品 > 晶体管(BJT) - 阵列﹐预偏压式

厂商 包装系列晶体管类型电流-集电极(Ic)(最大值)电压-集射极击穿(最大值)电阻器-基底(R1)(欧姆)电阻器-发射极基底(R2)(欧姆)不同Ic,Vce时的DC电流增益(hFE)(最小值)不同Ib,Ic时的Vce饱和值(最大值)电流-集电极截止(最大值)频率-跃迁功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
RN2903,LF RN2903,LF Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.2W US6
RN2903,LF RN2903,LF Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.2W US6
RN2903,LF RN2903,LF Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.2W US6
RN2904,LF RN2904,LF Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.2W US6
RN2904,LF RN2904,LF Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.2W US6
RN2904,LF RN2904,LF Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.2W US6
RN4902,LF RN4902,LF Toshiba Semiconductor and Storage TRANS NPN/PNP PREBIAS 0.2W US6
RN4902,LF RN4902,LF Toshiba Semiconductor and Storage TRANS NPN/PNP PREBIAS 0.2W US6
RN4902,LF RN4902,LF Toshiba Semiconductor and Storage TRANS NPN/PNP PREBIAS 0.2W US6
RN1905,LF RN1905,LF Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1905,LF RN1905,LF Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1905,LF RN1905,LF Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1906,LF RN1906,LF Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1906,LF RN1906,LF Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1906,LF RN1906,LF Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1907,LF RN1907,LF Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1907,LF RN1907,LF Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1907,LF RN1907,LF Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1510(TE85L,F) RN1510(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.3W SMV
RN1510(TE85L,F) RN1510(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.3W SMV
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