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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SSM3K123TU,LF SSM3K123TU,LF Toshiba Semiconductor and Storage MOSFET N-CH 20V 4.2A UFM
SSM3K123TU,LF SSM3K123TU,LF Toshiba Semiconductor and Storage MOSFET N-CH 20V 4.2A UFM
SSM3K123TU,LF SSM3K123TU,LF Toshiba Semiconductor and Storage MOSFET N-CH 20V 4.2A UFM
SSM3J332R,LF SSM3J332R,LF Toshiba Semiconductor and Storage MOSFET P CH 30V 6A 2-3Z1A
SSM3J332R,LF SSM3J332R,LF Toshiba Semiconductor and Storage MOSFET P CH 30V 6A 2-3Z1A
SSM3J332R,LF SSM3J332R,LF Toshiba Semiconductor and Storage MOSFET P CH 30V 6A 2-3Z1A
SSM3K329R,LF SSM3K329R,LF Toshiba Semiconductor and Storage MOSFET N CH 30V 3.5A 2-3Z1A
SSM3K329R,LF SSM3K329R,LF Toshiba Semiconductor and Storage MOSFET N CH 30V 3.5A 2-3Z1A
SSM3K329R,LF SSM3K329R,LF Toshiba Semiconductor and Storage MOSFET N CH 30V 3.5A 2-3Z1A
SSM3K333R,LF SSM3K333R,LF Toshiba Semiconductor and Storage MOSFET N CH 30V 6A 2-3Z1A
SSM3K333R,LF SSM3K333R,LF Toshiba Semiconductor and Storage MOSFET N CH 30V 6A 2-3Z1A
SSM3K333R,LF SSM3K333R,LF Toshiba Semiconductor and Storage MOSFET N CH 30V 6A 2-3Z1A
TPN2R703NL,L1Q TPN2R703NL,L1Q Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON
TPN2R703NL,L1Q TPN2R703NL,L1Q Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON
TPN2R703NL,L1Q TPN2R703NL,L1Q Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON
TPCA8052-H(TE12LQM TPCA8052-H(TE12LQM Toshiba Semiconductor and Storage MOSFET N-CH 40V 20A 8SOP
TPCA8052-H(TE12LQM TPCA8052-H(TE12LQM Toshiba Semiconductor and Storage MOSFET N-CH 40V 20A 8SOP
TPCA8052-H(TE12LQM TPCA8052-H(TE12LQM Toshiba Semiconductor and Storage MOSFET N-CH 40V 20A 8SOP
2SK4017(Q) 2SK4017(Q) Toshiba Semiconductor and Storage MOSFET N-CH 60V 5A PW-MOLD2
TPHR9003NL,L1Q TPHR9003NL,L1Q Toshiba Semiconductor and Storage MOSFET N-CH 30V 60A 8-SOP
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