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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4493DY-T1-GE3 SI4493DY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 10A 8SOIC
SI4636DY-T1-E3 SI4636DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 17A 8SOIC
SI4660DY-T1-E3 SI4660DY-T1-E3 Vishay Siliconix MOSFET N-CH 25V 23.1A 8-SOIC
SI4682DY-T1-E3 SI4682DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4682DY-T1-GE3 SI4682DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4684DY-T1-E3 SI4684DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4684DY-T1-GE3 SI4684DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4688DY-T1-E3 SI4688DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 8.9A 8-SOIC
SI4831BDY-T1-E3 SI4831BDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 6.6A 8-SOIC
SI4831BDY-T1-GE3 SI4831BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 6.6A 8-SOIC
SI4836DY-T1-GE3 SI4836DY-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 17A 8-SOIC
SI4840DY-T1-GE3 SI4840DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 10A 8-SOIC
SI4850EY-T1 SI4850EY-T1 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI4858DY-T1-E3 SI4858DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC
SI4858DY-T1-GE3 SI4858DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC
SI4860DY-T1-GE3 SI4860DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4876DY-T1-GE3 SI4876DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 14A 8-SOIC
SI4880DY-T1-E3 SI4880DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC
SI4880DY-T1-GE3 SI4880DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC
SI4886DY-T1-E3 SI4886DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 9.5A 8-SOIC
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