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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SQ3426EEV-T1-GE3 SQ3426EEV-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 7A 6TSOP
SQ3426EEV-T1-GE3 SQ3426EEV-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 7A 6TSOP
SQ2360EES-T1-GE3 SQ2360EES-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 4.4A TO236
SQ2360EES-T1-GE3 SQ2360EES-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 4.4A TO236
SI9410BDY-T1-E3 SI9410BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 6.2A 8SOIC
SI9410BDY-T1-E3 SI9410BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 6.2A 8SOIC
SI9410BDY-T1-E3 SI9410BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 6.2A 8SOIC
SI8416DB-T1-GE3 SI8416DB-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 16A MICRO
SI8416DB-T1-GE3 SI8416DB-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 16A MICRO
SI8416DB-T1-GE3 SI8416DB-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 16A MICRO
SIA850DJ-T1-GE3 SIA850DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 190V 0.95A SC70-6
SIA850DJ-T1-GE3 SIA850DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 190V 0.95A SC70-6
SIA850DJ-T1-GE3 SIA850DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 190V 0.95A SC70-6
SI1406DH-T1-E3 SI1406DH-T1-E3 Vishay Siliconix MOSFET N-CH 20V 3.1A SC70-6
SI1406DH-T1-E3 SI1406DH-T1-E3 Vishay Siliconix MOSFET N-CH 20V 3.1A SC70-6
SI1406DH-T1-E3 SI1406DH-T1-E3 Vishay Siliconix MOSFET N-CH 20V 3.1A SC70-6
SUD45P03-10-E3 SUD45P03-10-E3 Vishay Siliconix MOSFET P-CH 30V TO252
SUD45P03-10-E3 SUD45P03-10-E3 Vishay Siliconix MOSFET P-CH 30V TO252
SUD45P03-10-E3 SUD45P03-10-E3 Vishay Siliconix MOSFET P-CH 30V TO252
SI7860DP-T1-E3 SI7860DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A PPAK SO-8
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