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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4836DY-T1-E3 SI4836DY-T1-E3 Vishay Siliconix MOSFET N-CH 12V 17A 8-SOIC
SI4860DY-T1-E3 SI4860DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4860DY-T1-E3 SI4860DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4860DY-T1-E3 SI4860DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4888DY-T1-E3 SI4888DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4888DY-T1-E3 SI4888DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4888DY-T1-E3 SI4888DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI1405DL-T1-E3 SI1405DL-T1-E3 Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6
SI1405DL-T1-E3 SI1405DL-T1-E3 Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6
SI1405DL-T1-E3 SI1405DL-T1-E3 Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6
SI2305ADS-T1-E3 SI2305ADS-T1-E3 Vishay Siliconix MOSFET P-CH 8V 5.4A SOT23-3
SI2305ADS-T1-E3 SI2305ADS-T1-E3 Vishay Siliconix MOSFET P-CH 8V 5.4A SOT23-3
SI2305ADS-T1-E3 SI2305ADS-T1-E3 Vishay Siliconix MOSFET P-CH 8V 5.4A SOT23-3
SI3445ADV-T1-E3 SI3445ADV-T1-E3 Vishay Siliconix MOSFET P-CH 8V 4.4A 6-TSOP
SI3445ADV-T1-E3 SI3445ADV-T1-E3 Vishay Siliconix MOSFET P-CH 8V 4.4A 6-TSOP
SI3445ADV-T1-E3 SI3445ADV-T1-E3 Vishay Siliconix MOSFET P-CH 8V 4.4A 6-TSOP
2N7002-E3 2N7002-E3 Vishay Siliconix MOSFET N-CH 60V 115MA SOT23
2N7002-E3 2N7002-E3 Vishay Siliconix MOSFET N-CH 60V 115MA SOT23
2N7002-E3 2N7002-E3 Vishay Siliconix MOSFET N-CH 60V 115MA SOT23
SI4038DY-T1-GE3 SI4038DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 42.5A SO-8
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