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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7860DP-T1-E3 SI7860DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A PPAK SO-8
SI7860DP-T1-E3 SI7860DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A PPAK SO-8
SUD40N10-25-E3 SUD40N10-25-E3 Vishay Siliconix MOSFET N-CH 100V 40A TO252
SUD40N10-25-E3 SUD40N10-25-E3 Vishay Siliconix MOSFET N-CH 100V 40A TO252
SUP40N10-30-E3 SUP40N10-30-E3 Vishay Siliconix MOSFET N-CH 100V 40A TO220AB
SUP75N03-04-E3 SUP75N03-04-E3 Vishay Siliconix MOSFET N-CH 30V 75A TO220AB
SUD50P04-13L-E3 SUD50P04-13L-E3 Vishay Siliconix MOSFET P-CH 40V 60A TO252
SUD50P04-13L-E3 SUD50P04-13L-E3 Vishay Siliconix MOSFET P-CH 40V 60A TO252
SUD50P04-13L-E3 SUD50P04-13L-E3 Vishay Siliconix MOSFET P-CH 40V 60A TO252
SI4401DY-T1-E3 SI4401DY-T1-E3 Vishay Siliconix MOSFET P-CH 40V 8.7A 8-SOIC
SI4401DY-T1-E3 SI4401DY-T1-E3 Vishay Siliconix MOSFET P-CH 40V 8.7A 8-SOIC
SI4401DY-T1-E3 SI4401DY-T1-E3 Vishay Siliconix MOSFET P-CH 40V 8.7A 8-SOIC
SI4404DY-T1-E3 SI4404DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC
SI4404DY-T1-E3 SI4404DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC
SI4404DY-T1-E3 SI4404DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC
SI4412ADY-T1-E3 SI4412ADY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 5.8A 8-SOIC
SI4412ADY-T1-E3 SI4412ADY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 5.8A 8-SOIC
SI4412ADY-T1-E3 SI4412ADY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 5.8A 8-SOIC
SI4836DY-T1-E3 SI4836DY-T1-E3 Vishay Siliconix MOSFET N-CH 12V 17A 8-SOIC
SI4836DY-T1-E3 SI4836DY-T1-E3 Vishay Siliconix MOSFET N-CH 12V 17A 8-SOIC
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