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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
CGH40006S CGH40006S Cree Inc FET RF HEMT 6GHZ 28V 3X3QFN
CGH40010F CGH40010F Cree Inc TRANS 10W RF GAN HEMT 440166 PKG
CGH40006P CGH40006P Cree Inc TRANS 8W RF GAN HEMT 440109 PKG
CGH55015F2 CGH55015F2 Cree Inc FET RF HEMT 5.65GHZ 84V 440166
CGHV40030F CGHV40030F Cree Inc HEMT RF 50V 6GHZ 30W
CGH40025F CGH40025F Cree Inc TRANS 25W RF GAN HEMT 440166 PKG
CGHV27200F CGHV27200F Cree Inc HEMT RF 50V 200W 2.7GHZ 440162
CGH40045F CGH40045F Cree Inc TRANS 45W RF GAN HEMT 440193 PKG
CGH40120F CGH40120F Cree Inc TRANS 120W RF GAN HEMT 440193PKG
CGH40090PP CGH40090PP Cree Inc TRANS 90W RF GAN HEMT 440199 PKG
CGHV14250F CGHV14250F Cree Inc MOSFET RF
CGH40180PP CGH40180PP Cree Inc TRANS 180W RF GAN HEMT 440199PKG
CGHV22100F CGHV22100F Cree Inc MOSF RF 125V 6A 2.2GHZ 440162
CGHV40050F CGHV40050F Cree Inc HEMT RF 50V 6GHZ 50W
CGH40010P CGH40010P Cree Inc TRANS 10W RF GAN HEMT 440196
CGH55030F2 CGH55030F2 Cree Inc FET RF HEMT 6GHZ 28V 440166
CGHV27100F CGHV27100F Cree Inc HEMT RF 50V 100W 2.7GHZ
CGHV14500F CGHV14500F Cree Inc MOSFET RF
CGHV22200F CGHV22200F Cree Inc MOSF RF 125V 12A 2.2GHZ 440162
CGH40006S CGH40006S Cree Inc FET RF HEMT 6GHZ 28V 3X3QFN
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