中电网首页

产品索引  > 分立半导体产品 > RF FET

厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
1... 89101112131415161718 138
PDF 缩略图 器件名称 制造商 描述
NE3509M04-T2-A NE3509M04-T2-A CEL AMP HJ-FET 2GHZ SOT-343
NE3515S02-T1C-A NE3515S02-T1C-A CEL FET RF HFET 12GHZ 2V 10MA S02
NE3515S02-T1C-A NE3515S02-T1C-A CEL FET RF HFET 12GHZ 2V 10MA S02
NE3515S02-T1C-A NE3515S02-T1C-A CEL FET RF HFET 12GHZ 2V 10MA S02
NE3520S03-A NE3520S03-A CEL FET RF HFET 20GHZ 2V 10MA S03
NE3512S02-T1C-A NE3512S02-T1C-A CEL HJ-FET NCH 13.5DB S02
NE3512S02-T1C-A NE3512S02-T1C-A CEL HJ-FET NCH 13.5DB S02
NE3512S02-T1C-A NE3512S02-T1C-A CEL HJ-FET NCH 13.5DB S02
NE3509M04-T2-A NE3509M04-T2-A CEL AMP HJ-FET 2GHZ SOT-343
NE3509M04-T2-A NE3509M04-T2-A CEL AMP HJ-FET 2GHZ SOT-343
NE3509M04-T2-A NE3509M04-T2-A CEL AMP HJ-FET 2GHZ SOT-343
NE3515S02-T1C-A NE3515S02-T1C-A CEL FET RF HFET 12GHZ 2V 10MA S02
NE3515S02-T1C-A NE3515S02-T1C-A CEL FET RF HFET 12GHZ 2V 10MA S02
NE3515S02-T1C-A NE3515S02-T1C-A CEL FET RF HFET 12GHZ 2V 10MA S02
NE3520S03-A NE3520S03-A CEL FET RF HFET 20GHZ 2V 10MA S03
2N3819 2N3819 Central Semiconductor Corp TRANS JFET N-CH 25V 10MA TO-92
2N4340 2N4340 Central Semiconductor Corp TRANS JFET N-CH 50V 50MA TO-18
2N5486 2N5486 Central Semiconductor Corp TRANS JFET N-CH 25V 30MA TO-92
CGH40006S CGH40006S Cree Inc FET RF HEMT 6GHZ 28V 3X3QFN
CGH40006S CGH40006S Cree Inc FET RF HEMT 6GHZ 28V 3X3QFN
1... 89101112131415161718 138