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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI1433DH-T1-E3 SI1433DH-T1-E3 Vishay Siliconix MOSFET P-CH 30V 1.9A SC70-6
SI1433DH-T1-E3 SI1433DH-T1-E3 Vishay Siliconix MOSFET P-CH 30V 1.9A SC70-6
SI1433DH-T1-E3 SI1433DH-T1-E3 Vishay Siliconix MOSFET P-CH 30V 1.9A SC70-6
SI1450DH-T1-E3 SI1450DH-T1-E3 Vishay Siliconix MOSFET N-CH 8V 4.53A SC70-6
SI1450DH-T1-E3 SI1450DH-T1-E3 Vishay Siliconix MOSFET N-CH 8V 4.53A SC70-6
SI1450DH-T1-E3 SI1450DH-T1-E3 Vishay Siliconix MOSFET N-CH 8V 4.53A SC70-6
SI2305DS-T1-E3 SI2305DS-T1-E3 Vishay Siliconix MOSFET P-CH 8V 3.5A SOT23-3
SI2305DS-T1-E3 SI2305DS-T1-E3 Vishay Siliconix MOSFET P-CH 8V 3.5A SOT23-3
SI2308DS-T1-E3 SI2308DS-T1-E3 Vishay Siliconix MOSFET N-CH 60V 2A SOT23-3
SI2308DS-T1-E3 SI2308DS-T1-E3 Vishay Siliconix MOSFET N-CH 60V 2A SOT23-3
SI2308DS-T1-E3 SI2308DS-T1-E3 Vishay Siliconix MOSFET N-CH 60V 2A SOT23-3
SI2309DS-T1-E3 SI2309DS-T1-E3 Vishay Siliconix MOSFET P-CH 60V 1.25A SOT23-3
SI2309DS-T1-E3 SI2309DS-T1-E3 Vishay Siliconix MOSFET P-CH 60V 1.25A SOT23-3
SI2309DS-T1-E3 SI2309DS-T1-E3 Vishay Siliconix MOSFET P-CH 60V 1.25A SOT23-3
SI3424DV-T1-E3 SI3424DV-T1-E3 Vishay Siliconix MOSFET N-CH 30V 5A 6-TSOP
SI3424DV-T1-E3 SI3424DV-T1-E3 Vishay Siliconix MOSFET N-CH 30V 5A 6-TSOP
SI3433BDV-T1-E3 SI3433BDV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.3A 6-TSOP
SI3433BDV-T1-E3 SI3433BDV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.3A 6-TSOP
SI3433BDV-T1-E3 SI3433BDV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.3A 6-TSOP
SI3434DV-T1-E3 SI3434DV-T1-E3 Vishay Siliconix MOSFET N-CH 30V 4.6A 6-TSOP
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