FET - 单元器件大全_分立半导体产品-中电网

厂商	包装	系列	FET类型	FET功能	漏源极电压（Vdss）	电流-连续漏极（Id）（25°C时）	不同Id，Vgs时的RdsOn（最大值）	不同Id时的Vgs（th）（最大值）	不同Vgs时的栅极电荷（Qg）	不同Vds时的输入电容（Ciss）	功率-最大值	安装类型	封装/外壳	供应商器件封装

器件名称	制造商	描述
TPW4R50ANH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 92A 8DSOP
TPCF8107,LF	Toshiba Semiconductor and Storage	MOSFET P-CH -30V -6A VS-8
TPCF8107,LF	Toshiba Semiconductor and Storage	MOSFET P-CH -30V -6A VS-8
TPCF8107,LF	Toshiba Semiconductor and Storage	MOSFET P-CH -30V -6A VS-8
TPN3300ANH,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 9.4A 8TSON
TPN3300ANH,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 9.4A 8TSON
TPN3300ANH,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 9.4A 8TSON
TK10P60W,RVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 9.7A DPAK
TK10P60W,RVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 9.7A DPAK
TK10P60W,RVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 9.7A DPAK
TPN5900CNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 9A 8TSON
TPN5900CNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 9A 8TSON
TPN5900CNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 9A 8TSON
TPN5900CNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 9A 8TSON
TPN5900CNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 9A 8TSON
TPH5900CNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 9A 8SOP
TPH5900CNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 9A 8SOP
TPH5900CNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 9A 8SOP
TPCA8045-H(T2L1,VM	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 46A 8-SOP ADV
TPWR8503NL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 150A 8DSOP